All MOSFET. WMM020N10HGS Datasheet

 

WMM020N10HGS Datasheet and Replacement


   Type Designator: WMM020N10HGS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 390.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 280 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 255 nC
   tr ⓘ - Rise Time: 88 nS
   Cossⓘ - Output Capacitance: 2120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0022 Ohm
   Package: TO263
 
   - MOSFET ⓘ Cross-Reference Search

 

WMM020N10HGS Datasheet (PDF)

 ..1. Size:694K  way-on
 wmm020n10hgs.pdf pdf_icon

WMM020N10HGS

WMM020N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMM020N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This GSdevice is well suited for high efficiency fast switching applications.TO-263Features V = 100V, I = 280A

 7.1. Size:665K  way-on
 wmm020n06hg4.pdf pdf_icon

WMM020N10HGS

WMM020N06HG4 60V N-Channel Enhancement Mode Power MOSFET DescriptionWMM020N06HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This GSdevice is well suited for high efficiency fast switching applications. TO-263Features V = 60V, I = 25

 9.1. Size:708K  way-on
 wmm028n10hgs.pdf pdf_icon

WMM020N10HGS

WMM028N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMM028N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This GSdevice is well suited for high efficiency fast switching applications. TO-263Features V = 100V, I = 257A

 9.2. Size:678K  way-on
 wmm028n10hg2.pdf pdf_icon

WMM020N10HGS

WMM028N10HG2 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMM028N10HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This device Gis well suited for high efficiency fast switching applications. STO-263Features V =100V, I = 245

SHOW MORE

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , SPP20N60C3 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

Keywords - WMM020N10HGS MOSFET datasheet

 WMM020N10HGS cross reference
 WMM020N10HGS equivalent finder
 WMM020N10HGS lookup
 WMM020N10HGS substitution
 WMM020N10HGS replacement

 

 
Back to Top

 


 
.