WMM020N10HGS MOSFET Datasheet: N-Ch, 100V, 280A. Full specification with pinout and replacement list

WMM020N10HGS Specs and Replacement

   Type Designator: WMM020N10HGS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 390.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 280 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 88 nS
   Cossⓘ - Output Capacitance: 2120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0022 Ohm
   Package: TO263

WMM020N10HGS substitution

- MOSFET ⓘ Cross-Reference Search

WMM020N10HGS datasheet

..1. Size:694K way-on
wmm020n10hgs.pdf pdf_icon

WMM020N10HGS 100V N-Channel Enhancement Mode Power MOSFET Description WMM020N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state D resistance and yet maintain superior switching performance. This G S device is well suited for high efficiency fast switching applications. TO-263 Features V = 100V, I = 280A ... See More ⇒

7.1. Size:665K way-on
wmm020n06hg4.pdf pdf_icon

WMM020N06HG4 60V N-Channel Enhancement Mode Power MOSFET Description WMM020N06HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state D resistance and yet maintain superior switching performance. This G S device is well suited for high efficiency fast switching applications. TO-263 Features V = 60V, I = 25... See More ⇒

9.1. Size:708K way-on
wmm028n10hgs.pdf pdf_icon

WMM028N10HGS 100V N-Channel Enhancement Mode Power MOSFET Description WMM028N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state D resistance and yet maintain superior switching performance. This G S device is well suited for high efficiency fast switching applications. TO-263 Features V = 100V, I = 257A ... See More ⇒

9.2. Size:678K way-on
wmm028n10hg2.pdf pdf_icon

WMM028N10HG2 100V N-Channel Enhancement Mode Power MOSFET Description WMM028N10HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state D resistance and yet maintain superior switching performance. This device G is well suited for high efficiency fast switching applications. S TO-263 Features V =100V, I = 245... See More ⇒