WMM023N08HGS Todos los transistores

 

WMM023N08HGS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: WMM023N08HGS

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 329 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 270 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 53 nS

Cossⓘ - Capacitancia de salida: 1475 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0026 Ohm

Encapsulados: TO263

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WMM023N08HGS datasheet

 ..1. Size:654K  way-on
 wmm023n08hgs.pdf pdf_icon

WMM023N08HGS

WMM023N08HGS 80V N-Channel Enhancement Mode Power MOSFET Description WMM023N08HGS uses Wayon's advanced power trench MOSFET D technology that has been especially tailored to minimize the on-state G resistance and yet maintain superior switching performance. This S device is well suited for high efficiency fast switching applications. TO-263 Features V = 80V, I = 270A DS

 9.1. Size:708K  way-on
 wmm028n10hgs.pdf pdf_icon

WMM023N08HGS

WMM028N10HGS 100V N-Channel Enhancement Mode Power MOSFET Description WMM028N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state D resistance and yet maintain superior switching performance. This G S device is well suited for high efficiency fast switching applications. TO-263 Features V = 100V, I = 257A

 9.2. Size:665K  way-on
 wmm020n06hg4.pdf pdf_icon

WMM023N08HGS

WMM020N06HG4 60V N-Channel Enhancement Mode Power MOSFET Description WMM020N06HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state D resistance and yet maintain superior switching performance. This G S device is well suited for high efficiency fast switching applications. TO-263 Features V = 60V, I = 25

 9.3. Size:678K  way-on
 wmm028n10hg2.pdf pdf_icon

WMM023N08HGS

WMM028N10HG2 100V N-Channel Enhancement Mode Power MOSFET Description WMM028N10HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state D resistance and yet maintain superior switching performance. This device G is well suited for high efficiency fast switching applications. S TO-263 Features V =100V, I = 245

MOSTRAR MÁS

Otros transistores... WMLL025N10HGS , WMLL030N12HGS , WMLL040N15HG2 , WMLL065N15HG2 , WMLL099N20HG2 , WMM015N08HGS , WMM020N06HG4 , WMM020N10HGS , IRFP260 , WMM028N10HG2 , WMM028N10HGS , WMM030N06HG4 , WMM036N12HGS , WMM037N10HGS , WMM040N08HGS , WMM040N15HG2 , WMM043N10HGS .

History: BLV2N60 | SWT38N65K2 | NTJS4151P | NVTFS5826NL | AP95T10GI | AOD3N40 | NVA4153N

 

 

 

 

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