WMM023N08HGS - описание и поиск аналогов

 

WMM023N08HGS. Аналоги и основные параметры

Наименование производителя: WMM023N08HGS

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 329 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 80 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 270 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 53 ns

Cossⓘ - Выходная емкость: 1475 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0026 Ohm

Тип корпуса: TO263

Аналог (замена) для WMM023N08HGS

- подборⓘ MOSFET транзистора по параметрам

 

WMM023N08HGS даташит

 ..1. Size:654K  way-on
 wmm023n08hgs.pdf pdf_icon

WMM023N08HGS

WMM023N08HGS 80V N-Channel Enhancement Mode Power MOSFET Description WMM023N08HGS uses Wayon's advanced power trench MOSFET D technology that has been especially tailored to minimize the on-state G resistance and yet maintain superior switching performance. This S device is well suited for high efficiency fast switching applications. TO-263 Features V = 80V, I = 270A DS

 9.1. Size:708K  way-on
 wmm028n10hgs.pdf pdf_icon

WMM023N08HGS

WMM028N10HGS 100V N-Channel Enhancement Mode Power MOSFET Description WMM028N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state D resistance and yet maintain superior switching performance. This G S device is well suited for high efficiency fast switching applications. TO-263 Features V = 100V, I = 257A

 9.2. Size:665K  way-on
 wmm020n06hg4.pdf pdf_icon

WMM023N08HGS

WMM020N06HG4 60V N-Channel Enhancement Mode Power MOSFET Description WMM020N06HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state D resistance and yet maintain superior switching performance. This G S device is well suited for high efficiency fast switching applications. TO-263 Features V = 60V, I = 25

 9.3. Size:678K  way-on
 wmm028n10hg2.pdf pdf_icon

WMM023N08HGS

WMM028N10HG2 100V N-Channel Enhancement Mode Power MOSFET Description WMM028N10HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state D resistance and yet maintain superior switching performance. This device G is well suited for high efficiency fast switching applications. S TO-263 Features V =100V, I = 245

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... WMLL025N10HGS , WMLL030N12HGS , WMLL040N15HG2 , WMLL065N15HG2 , WMLL099N20HG2 , WMM015N08HGS , WMM020N06HG4 , WMM020N10HGS , IRFP260 , WMM028N10HG2 , WMM028N10HGS , WMM030N06HG4 , WMM036N12HGS , WMM037N10HGS , WMM040N08HGS , WMM040N15HG2 , WMM043N10HGS .

History: RCJ120N20 | AP10TN135M

 

 

 

 

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