WMM023N08HGS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: WMM023N08HGS
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 329 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 270 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 145 nC
trⓘ - Время нарастания: 53 ns
Cossⓘ - Выходная емкость: 1475 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0026 Ohm
Тип корпуса: TO263
Аналог (замена) для WMM023N08HGS
WMM023N08HGS Datasheet (PDF)
wmm023n08hgs.pdf
WMM023N08HGS 80V N-Channel Enhancement Mode Power MOSFET DescriptionWMM023N08HGS uses Wayon's advanced power trench MOSFET Dtechnology that has been especially tailored to minimize the on-state Gresistance and yet maintain superior switching performance. This Sdevice is well suited for high efficiency fast switching applications.TO-263Features V = 80V, I = 270A DS
wmm028n10hgs.pdf
WMM028N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMM028N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This GSdevice is well suited for high efficiency fast switching applications. TO-263Features V = 100V, I = 257A
wmm020n06hg4.pdf
WMM020N06HG4 60V N-Channel Enhancement Mode Power MOSFET DescriptionWMM020N06HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This GSdevice is well suited for high efficiency fast switching applications. TO-263Features V = 60V, I = 25
wmm028n10hg2.pdf
WMM028N10HG2 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMM028N10HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This device Gis well suited for high efficiency fast switching applications. STO-263Features V =100V, I = 245
wmm020n10hgs.pdf
WMM020N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMM020N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This GSdevice is well suited for high efficiency fast switching applications.TO-263Features V = 100V, I = 280A
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Список транзисторов
Обновления
MOSFET: SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD | SRN1660F