STF8204 Todos los transistores

 

STF8204 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STF8204
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.56 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 9.5 A

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.5 V
   Qgⓘ - Carga de la puerta: 10.7 nC
   Cossⓘ - Capacitancia de salida: 213 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
   Paquete / Cubierta: TDFN2X3

 Búsqueda de reemplazo de MOSFET STF8204

 

STF8204 Datasheet (PDF)

 ..1. Size:117K  samhop
stf8204.pdf

STF8204
STF8204

GreenProductSTF8204aS mHop Microelectronics C orp.Ver 2.1Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.9.0 @ VGS=4.5VSuface Mount Package.9.5 @ VGS=4.0V20V 9.5A 10.0 @ VGS=3.7V ESD Protected.11.2 @ VGS=3.1V13.5 @ VGS=2.5VG2Bottom Drain C

 8.1. Size:86K  samhop
stf8209a.pdf

STF8204
STF8204

GreerrPPrPrProSTF8209AaS mHop Microelectronics C orp.Ver 1.0Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.22.0 @ VGS=4.5VSuface Mount Package.23.0 @ VGS=4.0V20V 6.5A 24.0 @ VGS=3.7V ESD Protected.27.5 @ VGS=3.1V33.5 @ VGS=2.5VBot

 8.2. Size:89K  samhop
stf8209.pdf

STF8204
STF8204

GrPPrPPSTF8209aS mHop Microelectronics C orp.Ver 2.2Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.22.0 @ VGS=4.5VSuface Mount Package.22.5 @ VGS=4.0V20V 6.5A 23.5 @ VGS=3.7V ESD Protected.27.5 @ VGS=3.1V33.5 @ VGS=2.5VG2Bottom Drai

 9.1. Size:127K  st
stf826 stn826.pdf

STF8204
STF8204

STF826STN826PNP MEDIUM POWER TRANSISTORSFeatures SURFACE MOUNTING DEVICES IN MEDIUM POWER SOT-223 AND SOT-89 PACKAGES AVAILABLE IN TAPE & REEL PACKING 2 IN COMPLIANCE WITH THE 2002/93/EC 3EUROPEAN DIRECTIVE21Applications VOLTAGE REGULATION SOT-223 SOT-89 RELAY DRIVER GENERIC SWITCHDescriptionInternal Schematic DiagramThe STF826 and STN826 ar

 9.2. Size:103K  samhop
stf8236.pdf

STF8204
STF8204

GreenProductSTF8236aS mHop Microelectronics C orp.Ver 1.0Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.22.0 @ VGS=4.5VSuface Mount Package.22.5 @ VGS=4.0VESD Protected.20V 6A 23.0 @ VGS=3.7V25.0 @ VGS=3.1V29.0 @ VGS=2.5VP IN 1PIN

 9.3. Size:965K  samhop
stf8220.pdf

STF8204
STF8204

S T F 8220S amHop Microelectronics C orp. Oct.23 2006 ver1.1 Dual N-C hannel E nhancement Mode Field E ffect TransistorP R ODUC T S UMMAR Y F E AT UR E SS uper high dense cell design for low R DS (ON).V DS S ID R DS (ON) ( mW ) MaxR ugged and reliable.20 @ V G S = 4.0V20V 7AS urface Mount Package.28 @ V G S = 2.5VE S D P rotected. S2Bottom Drain Contact S2S1 4

 9.4. Size:100K  samhop
stf8211.pdf

STF8204
STF8204

GreenProductSTF8211aS mHop Microelectronics C orp.Ver 1.5Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.13.5 @ VGS=4.0VSuface Mount Package.20V 8A20.0 @ VGS=2.5VESD Protected.G2Bottom Drain Contact (D1/D2)S234G1 G2S2D1/D2G1S

 9.5. Size:96K  samhop
stf8234.pdf

STF8204
STF8204

GreenProductSTF8234aS mHop Microelectronics C orp.Ver 1.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.5.2 @ VGS=4.5VSuface Mount Package.5.3 @ VGS=4.0V 20V 14A 5.4 @ VGS=3.7V ESD Protected.5.9 @ VGS=3.1V6.8 @ VGS=2.5VD DDDG GST D

 9.6. Size:100K  samhop
stf8233.pdf

STF8204
STF8204

GreenProductSTF8233aS mHop Microelectronics C orp.Ver 2.1Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.7.2 @ VGS=4.5VSuface Mount Package.7.5 @ VGS=4.0V 20V 11A 8.2 @ VGS=3.7V ESD Protected.9.0 @ VGS=3.1V10.2 @ VGS=2.5VG2Bottom Drain Con

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