STF8204 MOSFET. Datasheet pdf. Equivalent
Type Designator: STF8204
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 1.56 W
Maximum Drain-Source Voltage |Vds|: 20 V
Maximum Gate-Source Voltage |Vgs|: 12 V
Maximum Drain Current |Id|: 9.5 A
Drain-Source Capacitance (Cd): 213 pF
Maximum Drain-Source On-State Resistance (Rds): 0.009 Ohm
Package: TDFN2x3
STF8204 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STF8204 Datasheet (PDF)
1.1. stf8204.pdf 
Size:117K _samhop
Green Product STF8204 a S mHop Microelectronics C orp. Ver 2.1 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (mΩ) Max Rugged and reliable. 9.0 @ VGS=4.5V Suface Mount Package. 9.5 @ VGS=4.0V 20V 9.5A 10.0 @ VGS=3.7V ESD Protected. 11.2 @ VGS=3.1V 13.5 @ VGS=2.5V G2 Bottom Drain C
4.1. stf8209.pdf Size:89K _samhop
Gr P Pr P P STF8209 a S mHop Microelectronics C orp. Ver 2.2 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (mΩ) Max Rugged and reliable. 22.0 @ VGS=4.5V Suface Mount Package. 22.5 @ VGS=4.0V 20V 6.5A 23.5 @ VGS=3.7V ESD Protected. 27.5 @ VGS=3.1V 33.5 @ VGS=2.5V G2 Bottom Drai
4.2. stf8209a.pdf Size:86K _samhop
Gree r r P Pr Pr Pro STF8209A a S mHop Microelectronics C orp. Ver 1.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (mΩ) Max Rugged and reliable. 22.0 @ VGS=4.5V Suface Mount Package. 23.0 @ VGS=4.0V 20V 6.5A 24.0 @ VGS=3.7V ESD Protected. 27.5 @ VGS=3.1V 33.5 @ VGS=2.5V Bot
Datasheet: FDPF55N06 , FDPF5N50FT , FDPF5N50NZ , FDPF5N50NZF , FDPF5N50NZU , FDPF5N50T , FDPF5N50UT , FDPF5N60NZ , IRF830 , FDPF680N10T , STF620S , FDPF6N60ZUT , STF445 , FDPF770N15A , FDPF7N60NZ , STF443 , FDPF8N50NZ .
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