WMM030N06HG4 Todos los transistores

 

WMM030N06HG4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WMM030N06HG4
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 208.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 184 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 17.8 nS
   Cossⓘ - Capacitancia de salida: 1053 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.003 Ohm
   Paquete / Cubierta: TO263
 

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WMM030N06HG4 Datasheet (PDF)

 ..1. Size:693K  way-on
wmm030n06hg4.pdf pdf_icon

WMM030N06HG4

WMM030N06HG4 60V N-Channel Enhancement Mode Power MOSFET DescriptionWMM030N06HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This device GSis well suited for high efficiency fast switching applications. TO-263Features V = 60V, I = 18

 9.1. Size:692K  way-on
wmm036n12hgs.pdf pdf_icon

WMM030N06HG4

WMM036N12HGS 120V N-Channel Enhancement Mode Power MOSFET DescriptionWMM036N12HGS uses Wayon's advanced power trench MOSFET Dtechnology that has been especially tailored to minimize the on-state Gresistance and yet maintain superior switching performance. This Sdevice is well suited for high efficiency fast switching applications. TO-263Features V = 120V, I = 188A

 9.2. Size:669K  way-on
wml03n80m3 wmn03n80m3 wmm03n80m3 wmo03n80m3 wmp03n80m3 wmk03n80m3.pdf pdf_icon

WMM030N06HG4

WML03N80M3, W 80M3, WM M3 WMN03N8 MM03N80MWMO0 80M3, WM M3 03N80M3, WMP03N8 MK03N80M 800 Junction ET0V 3.0 Super J n Power MOSFEDescripptionWMOSTM M3 is Wayo neration 800M ons 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G Tand low ga charge perf

 9.3. Size:677K  way-on
wmm037n10hgs.pdf pdf_icon

WMM030N06HG4

WMM037N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMM037N10HGS uses Wayon's advanced power trench MOSFET Dtechnology that has been especially tailored to minimize the on-state Gresistance and yet maintain superior switching performance. This Sdevice is well suited for high efficiency fast switching applications. TO-263Features V = 100V, I = 170A

Otros transistores... WMLL065N15HG2 , WMLL099N20HG2 , WMM015N08HGS , WMM020N06HG4 , WMM020N10HGS , WMM023N08HGS , WMM028N10HG2 , WMM028N10HGS , IRF9540N , WMM036N12HGS , WMM037N10HGS , WMM040N08HGS , WMM040N15HG2 , WMM043N10HGS , WMM048NV6HG4 , WMM053N10HGS , WMM053NV8HGS .

History: SiS412DN | MTP2N50 | IRF7463 | R6006KND3 | NCEP02T11D | FDMS8820

 

 
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