WMM030N06HG4 - описание и поиск аналогов

 

WMM030N06HG4. Аналоги и основные параметры

Наименование производителя: WMM030N06HG4

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 208.3 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 184 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 17.8 ns

Cossⓘ - Выходная емкость: 1053 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.003 Ohm

Тип корпуса: TO263

Аналог (замена) для WMM030N06HG4

- подборⓘ MOSFET транзистора по параметрам

 

WMM030N06HG4 даташит

 ..1. Size:693K  way-on
 wmm030n06hg4.pdf pdf_icon

WMM030N06HG4

WMM030N06HG4 60V N-Channel Enhancement Mode Power MOSFET Description WMM030N06HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state D resistance and yet maintain superior switching performance. This device G S is well suited for high efficiency fast switching applications. TO-263 Features V = 60V, I = 18

 9.1. Size:692K  way-on
 wmm036n12hgs.pdf pdf_icon

WMM030N06HG4

WMM036N12HGS 120V N-Channel Enhancement Mode Power MOSFET Description WMM036N12HGS uses Wayon's advanced power trench MOSFET D technology that has been especially tailored to minimize the on-state G resistance and yet maintain superior switching performance. This S device is well suited for high efficiency fast switching applications. TO-263 Features V = 120V, I = 188A

 9.2. Size:669K  way-on
 wml03n80m3 wmn03n80m3 wmm03n80m3 wmo03n80m3 wmp03n80m3 wmk03n80m3.pdf pdf_icon

WMM030N06HG4

WML03N80M3, W 80M3, WM M3 WMN03N8 MM03N80M WMO0 80M3, WM M3 03N80M3, WMP03N8 MK03N80M 800 Junction ET 0V 3.0 Super J n Power MOSFE Descrip ption WMOSTM M3 is Wayo neration 800 M on s 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D G G G T and low ga charge perf

 9.3. Size:677K  way-on
 wmm037n10hgs.pdf pdf_icon

WMM030N06HG4

WMM037N10HGS 100V N-Channel Enhancement Mode Power MOSFET Description WMM037N10HGS uses Wayon's advanced power trench MOSFET D technology that has been especially tailored to minimize the on-state G resistance and yet maintain superior switching performance. This S device is well suited for high efficiency fast switching applications. TO-263 Features V = 100V, I = 170A

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... WMLL065N15HG2 , WMLL099N20HG2 , WMM015N08HGS , WMM020N06HG4 , WMM020N10HGS , WMM023N08HGS , WMM028N10HG2 , WMM028N10HGS , SKD502T , WMM036N12HGS , WMM037N10HGS , WMM040N08HGS , WMM040N15HG2 , WMM043N10HGS , WMM048NV6HG4 , WMM053N10HGS , WMM053NV8HGS .

History: WSF07N10 | TK560A60Y | STW70N65M2

 

 

 

 

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