WMM048NV6HG4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: WMM048NV6HG4
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 104.2 W
   Voltaje máximo drenador - fuente |Vds|: 65 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 110 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 28.5 nC
   Tiempo de subida (tr): 8.2 nS
   Conductancia de drenaje-sustrato (Cd): 772 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0052 Ohm
   Paquete / Cubierta: TO263

Búsqueda de reemplazo de MOSFET WMM048NV6HG4

WMM048NV6HG4 Datasheet (PDF)

..1. Size:700K way-on
wmm048nv6hg4.pdf

WMM048NV6HG4 65V N-Channel Enhancement Mode Power MOSFET DescriptionWMM048NV6HG4 uses Wayon's 4th generation power trench DMOSFET technology that has been especially tailored to minimize the Gon-state resistance and yet maintain superior switching performance. SThis device is well suited for high efficiency fast switching applications. TO-263Features V = 65V, I = 11

9.1. Size:489K way-on
wmm040n08hgs.pdf

WMM040N08HGS 80V N-Channel Enhancement Mode Power MOSFET DescriptionWMM040N08HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This Gdevice is well suited for high efficiency fast switching applications. STO-263Features V = 80V, I = 180A D

9.2. Size:680K way-on
wmm043n10hgs.pdf

WMM043N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMM043N10HGS uses Wayon's advanced power trench MOSFET Dtechnology that has been especially tailored to minimize the on-state Gresistance and yet maintain superior switching performance. This Sdevice is well suited for high efficiency fast switching applications. TO-263Features V = 100V, I = 145A

9.3. Size:679K way-on
wmm040n15hg2.pdf

WMM040N15HG2 150V N-Channel Enhancement Mode Power MOSFET DescriptionWMM040N15HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This GSdevice is well suited for high efficiency fast switching applications. TO-263Features V = 150V, I =

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

Liste

Recientemente añadidas las descripciónes de los transistores: