WMM048NV6HG4 Todos los transistores

 

WMM048NV6HG4 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: WMM048NV6HG4

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 104.2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 65 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 110 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8.2 nS

Cossⓘ - Capacitancia de salida: 772 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0052 Ohm

Encapsulados: TO263

 Búsqueda de reemplazo de WMM048NV6HG4 MOSFET

- Selecciónⓘ de transistores por parámetros

 

WMM048NV6HG4 datasheet

 ..1. Size:700K  way-on
 wmm048nv6hg4.pdf pdf_icon

WMM048NV6HG4

WMM048NV6HG4 65V N-Channel Enhancement Mode Power MOSFET Description WMM048NV6HG4 uses Wayon's 4th generation power trench D MOSFET technology that has been especially tailored to minimize the G on-state resistance and yet maintain superior switching performance. S This device is well suited for high efficiency fast switching applications. TO-263 Features V = 65V, I = 11

 9.1. Size:489K  way-on
 wmm040n08hgs.pdf pdf_icon

WMM048NV6HG4

WMM040N08HGS 80V N-Channel Enhancement Mode Power MOSFET Description WMM040N08HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state D resistance and yet maintain superior switching performance. This G device is well suited for high efficiency fast switching applications. S TO-263 Features V = 80V, I = 180A D

 9.2. Size:680K  way-on
 wmm043n10hgs.pdf pdf_icon

WMM048NV6HG4

WMM043N10HGS 100V N-Channel Enhancement Mode Power MOSFET Description WMM043N10HGS uses Wayon's advanced power trench MOSFET D technology that has been especially tailored to minimize the on-state G resistance and yet maintain superior switching performance. This S device is well suited for high efficiency fast switching applications. TO-263 Features V = 100V, I = 145A

 9.3. Size:679K  way-on
 wmm040n15hg2.pdf pdf_icon

WMM048NV6HG4

WMM040N15HG2 150V N-Channel Enhancement Mode Power MOSFET Description WMM040N15HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state D resistance and yet maintain superior switching performance. This G S device is well suited for high efficiency fast switching applications. TO-263 Features V = 150V, I =

MOSTRAR MÁS

Otros transistores... WMM028N10HG2 , WMM028N10HGS , WMM030N06HG4 , WMM036N12HGS , WMM037N10HGS , WMM040N08HGS , WMM040N15HG2 , WMM043N10HGS , IRF1010E , WMM053N10HGS , WMM053NV8HGS , WMM071N15HG2 , WMM07N60C4 , WML07N60C4 , WMO07N60C4 , WMN07N60C4 , WMP07N60C4 .

History: SI3134KDW | SWU16N70K | WSF40N10A

 

 

 

 

↑ Back to Top
.