WMM048NV6HG4 PDF and Equivalents Search

 

WMM048NV6HG4 Specs and Replacement

Type Designator: WMM048NV6HG4

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 104.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 110 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8.2 nS

Cossⓘ - Output Capacitance: 772 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm

Package: TO263

WMM048NV6HG4 substitution

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WMM048NV6HG4 datasheet

 ..1. Size:700K  way-on
 wmm048nv6hg4.pdf pdf_icon

WMM048NV6HG4

WMM048NV6HG4 65V N-Channel Enhancement Mode Power MOSFET Description WMM048NV6HG4 uses Wayon's 4th generation power trench D MOSFET technology that has been especially tailored to minimize the G on-state resistance and yet maintain superior switching performance. S This device is well suited for high efficiency fast switching applications. TO-263 Features V = 65V, I = 11... See More ⇒

 9.1. Size:489K  way-on
 wmm040n08hgs.pdf pdf_icon

WMM048NV6HG4

WMM040N08HGS 80V N-Channel Enhancement Mode Power MOSFET Description WMM040N08HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state D resistance and yet maintain superior switching performance. This G device is well suited for high efficiency fast switching applications. S TO-263 Features V = 80V, I = 180A D... See More ⇒

 9.2. Size:680K  way-on
 wmm043n10hgs.pdf pdf_icon

WMM048NV6HG4

WMM043N10HGS 100V N-Channel Enhancement Mode Power MOSFET Description WMM043N10HGS uses Wayon's advanced power trench MOSFET D technology that has been especially tailored to minimize the on-state G resistance and yet maintain superior switching performance. This S device is well suited for high efficiency fast switching applications. TO-263 Features V = 100V, I = 145A ... See More ⇒

 9.3. Size:679K  way-on
 wmm040n15hg2.pdf pdf_icon

WMM048NV6HG4

WMM040N15HG2 150V N-Channel Enhancement Mode Power MOSFET Description WMM040N15HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state D resistance and yet maintain superior switching performance. This G S device is well suited for high efficiency fast switching applications. TO-263 Features V = 150V, I = ... See More ⇒

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Detailed specifications: WMM028N10HG2, WMM028N10HGS, WMM030N06HG4, WMM036N12HGS, WMM037N10HGS, WMM040N08HGS, WMM040N15HG2, WMM043N10HGS, IRF1010E, WMM053N10HGS, WMM053NV8HGS, WMM071N15HG2, WMM07N60C4, WML07N60C4, WMO07N60C4, WMN07N60C4, WMP07N60C4

Keywords - WMM048NV6HG4 MOSFET specs

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