WMM053NV8HGS Todos los transistores

WMM053NV8HGS 85V N-Channel Enhancement Mode Power MOSFET Description WMM053NV8HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state D resistance and yet maintain superior switching performance. This device G is well suited for high efficiency fast switching applications. S TO-263 Features V = 85V, I = 125A DS

WMM053N10HGS 100V N-Channel Enhancement Mode Power MOSFET Description WMM053N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state D resistance and yet maintain superior switching performance. This G S device is well suited for high efficiency fast switching applications. TO-263 Features V = 100V, I = 120A

WML05N80M3, W 80M3, WM M3 WMN05N8 MM05N80M WMO0 80M3, WM M3 05N80M3, WMP05N8 MK05N80M 800 Junction ET 0V 2.0 Super J n Power MOSFE Descrip ption WMOSTM M3 is Wayo neration 800 M on s 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D G G G T and low ga charge perf

W 0MM, WMO WMK05N70 O05N70MM WMN05N WMM05N70 N70MM, W 0MM, WMP05N70MM 700V 1.2 Z otected Power M T V Zener-pro MOSFET Descrip ption WMOSTM MM is Wa new generatio super ayon s w on junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G T and low ga ce. WMOSTM MM is ate charge

WML05N100C2, WMK05N100C2, WMM C2 M05N100C WMN05N WMP05N100C2, WMO C2 N100C2, W O05N100C 1000V 2.6 S T 0 Super Junction Power MOSFET Descrip ption WMOSTM C2 is Wa 2nd generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D S D G G G D G and low ga charge performanc WMOS

WML05N105C2, WMK05N105C2, WMM C2 M05N105C WMN05N WMP05N105C2, WMO C2 N105C2, W O05N105C 1050V 2.8 S T 0 Super Junction Power MOSFET Descrip ption WMOSTM C2 is Wa 2nd generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D S D G G G D G and low ga charge performanc WMOS