WMM053NV8HGS MOSFET. Datasheet pdf. Equivalent
Type Designator: WMM053NV8HGS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 162 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 125 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 76.2 nC
trⓘ - Rise Time: 24 nS
Cossⓘ - Output Capacitance: 725 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
Package: TO263
WMM053NV8HGS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMM053NV8HGS Datasheet (PDF)
wmm053nv8hgs.pdf
WMM053NV8HGS 85V N-Channel Enhancement Mode Power MOSFET DescriptionWMM053NV8HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This device Gis well suited for high efficiency fast switching applications.STO-263Features V = 85V, I = 125A DS
wmm053n10hgs.pdf
WMM053N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMM053N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This GSdevice is well suited for high efficiency fast switching applications. TO-263Features V = 100V, I = 120A
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Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: HUF76439P3
History: HUF76439P3
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