WMM071N15HG2 Todos los transistores

 

WMM071N15HG2 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: WMM071N15HG2

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 306 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 135 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 21.5 nS

Cossⓘ - Capacitancia de salida: 389 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0071 Ohm

Encapsulados: TO263

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WMM071N15HG2 datasheet

 ..1. Size:499K  way-on
 wmm071n15hg2.pdf pdf_icon

WMM071N15HG2

WMM071N15HG2 150V N-Channel Enhancement Mode Power MOSFET Description WMM071N15HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device D is well suited for high efficiency fast switching applications. G S Features TO-263 V = 150V, I = 135

 9.1. Size:731K  way-on
 wml07n100c2 wmn07n100c2 wmm07n100c2 wmj07n100c2 wmo07n100c2 wmp07n100c2 wmk07n100c2.pdf pdf_icon

WMM071N15HG2

WM 2, WMN07N MM07N100C ML07N100C2 N100C2, WM C2 WMJ07N100C2, WM C2, WMP07N MK07N100C MO07N100C N100C2, WM C2 1000V Super Ju MOSFET V 2.0 S unction Power M T Descrip ption WMOSTM C2 is Wa 2nd generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D G G G and low

 9.2. Size:636K  way-on
 wml07n65c2 wmh07n65c2 wmm07n65c2 wmo07n65c2 wmp07n65c2 wmg07n65c2.pdf pdf_icon

WMM071N15HG2

WML0 MM07N65C 07N65C2, WMH07N65C2, WM C2 WMO0 MG07N65C 07N65C2, WMP07N65C2, WM C2 650 Junction ET 0V 1.0 Super J n Power MOSFE Descrip ption WMOSTM C2 is Wa 2nd generation super ayon s n junction MOSFET fa that is utilizing charge M amily balance te or extremely esistance echnology fo y low on-re and low ga charge performanc WMOSTM C2 is ate ce. TO-220F TO TO-25

 9.3. Size:679K  way-on
 wml07n80m3 wmn07n80m3 wmm07n80m3 wmo07n80m3 wmp07n80m3 wmk07n80m3.pdf pdf_icon

WMM071N15HG2

WML07N80M3, W 80M3, WM M3 WMN07N8 MM07N80M WMO0 80M3, WM M3 07N80M3, WMP07N8 MK07N80M 800 Junction ET 0V 1.6 Super J n Power MOSFE Descrip ption WMOSTM M3 is Wayo neration 800 M on s 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D G G G T and low ga charge perf

MOSTRAR MÁS

Otros transistores... WMM036N12HGS , WMM037N10HGS , WMM040N08HGS , WMM040N15HG2 , WMM043N10HGS , WMM048NV6HG4 , WMM053N10HGS , WMM053NV8HGS , IRF530 , WMM07N60C4 , WML07N60C4 , WMO07N60C4 , WMN07N60C4 , WMP07N60C4 , WMK07N60C4 , WMM07N65C4 , WML07N65C4 .

History: WML13N65EM | WMO14N60C4

 

 

 

 

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