WMM071N15HG2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: WMM071N15HG2
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 306 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 135 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 21.5 nS
   Cossⓘ - Capacitancia de salida: 389 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0071 Ohm
   Paquete / Cubierta: TO263

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WMM071N15HG2 Datasheet (PDF)

..1. Size:499K way-on
wmm071n15hg2.pdf

WMM071N15HG2 150V N-Channel Enhancement Mode Power MOSFET DescriptionWMM071N15HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device Dis well suited for high efficiency fast switching applications.GSFeatures TO-263 V = 150V, I = 135

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9.2. Size:636K way-on
wml07n65c2 wmh07n65c2 wmm07n65c2 wmo07n65c2 wmp07n65c2 wmg07n65c2.pdf

WML0 MM07N65C07N65C2, WMH07N65C2, WM C2 WMO0 MG07N65C07N65C2, WMP07N65C2, WM C2 650 Junction ET0V 1.0 Super J n Power MOSFEDescripptionWMOSTM C2 is Wa 2nd generation super ayons n junction MOSFET fa that is utilizing charge M amily balance te or extremely esistance echnology fo y low on-reand low ga charge performanc WMOSTM C2 is ate ce. TO-220F TO TO-25

9.3. Size:679K way-on
wml07n80m3 wmn07n80m3 wmm07n80m3 wmo07n80m3 wmp07n80m3 wmk07n80m3.pdf

WML07N80M3, W 80M3, WM M3 WMN07N8 MM07N80MWMO0 80M3, WM M3 07N80M3, WMP07N8 MK07N80M 800 Junction ET0V 1.6 Super J n Power MOSFEDescripptionWMOSTM M3 is Wayo neration 800M ons 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G Tand low ga charge perf

9.4. Size:663K way-on
wmm07n65c4 wml07n65c4 wmo07n65c4 wmn07n65c4 wmp07n65c4 wmk07n65c4.pdf

WMM0 65C4, MO07N65C07N65C4, WML07N6 WM C4 WMN0 65C4, MK07N65C07N65C4, WMP07N6 WM C4 650V 0.96 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WM

9.5. Size:733K way-on
wml07n105c2 wmn07n105c2 wmm07n105c2 wmj07n105c2 wmo07n105c2 wmp07n105c2 wmk07n105c2.pdf

WM 2, WMN07N MM07N105CML07N105C2 N105C2, WM C2 WMJ07N105C2, WM C2, WMP07N MK07N105CMO07N105C N105C2, WM C2 1050V Super Ju MOSFETV 2.0 S unction Power M TDescripptionWMOSTM C2 is Wa 2nd generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G and low

9.6. Size:661K way-on
wmm07n70c4 wml07n70c4 wmo07n70c4 wmn07n70c4 wmp07n70c4 wmk07n70c4.pdf

WMM0 70C4, MO07N70C07N70C4, WML07N7 WM C4 WMN0 70C4, MK07N70C07N70C4, WMP07N7 WM C4 700V 0.96 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WM

9.7. Size:662K way-on
wmm07n60c4 wml07n60c4 wmo07n60c4 wmn07n60c4 wmp07n60c4 wmk07n60c4.pdf

WMM0 60C4, MO07N60C07N60C4, WML07N6 WM C4 WMN0 60C4, MK07N60C07N60C4, WMP07N6 WM C4 600V 0.96 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WM

9.8. Size:679K way-on
wml07n80m3 wmm07n80m3 wmo07n80m3 wmp07n80m3 wmk07n80m3 wmn07n80m3.pdf

Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

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