WMM071N15HG2 Todos los transistores

 

WMM071N15HG2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WMM071N15HG2
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 306 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 135 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 21.5 nS
   Cossⓘ - Capacitancia de salida: 389 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0071 Ohm
   Paquete / Cubierta: TO263
 

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WMM071N15HG2 Datasheet (PDF)

 ..1. Size:499K  way-on
 wmm071n15hg2.pdf pdf_icon

WMM071N15HG2

WMM071N15HG2 150V N-Channel Enhancement Mode Power MOSFET DescriptionWMM071N15HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device Dis well suited for high efficiency fast switching applications.GSFeatures TO-263 V = 150V, I = 135

 9.1. Size:731K  way-on
 wml07n100c2 wmn07n100c2 wmm07n100c2 wmj07n100c2 wmo07n100c2 wmp07n100c2 wmk07n100c2.pdf pdf_icon

WMM071N15HG2

WM 2, WMN07N MM07N100CML07N100C2 N100C2, WM C2 WMJ07N100C2, WM C2, WMP07N MK07N100CMO07N100C N100C2, WM C2 1000V Super Ju MOSFETV 2.0 S unction Power M TDescripptionWMOSTM C2 is Wa 2nd generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G and low

 9.2. Size:636K  way-on
 wml07n65c2 wmh07n65c2 wmm07n65c2 wmo07n65c2 wmp07n65c2 wmg07n65c2.pdf pdf_icon

WMM071N15HG2

WML0 MM07N65C07N65C2, WMH07N65C2, WM C2 WMO0 MG07N65C07N65C2, WMP07N65C2, WM C2 650 Junction ET0V 1.0 Super J n Power MOSFEDescripptionWMOSTM C2 is Wa 2nd generation super ayons n junction MOSFET fa that is utilizing charge M amily balance te or extremely esistance echnology fo y low on-reand low ga charge performanc WMOSTM C2 is ate ce. TO-220F TO TO-25

 9.3. Size:679K  way-on
 wml07n80m3 wmn07n80m3 wmm07n80m3 wmo07n80m3 wmp07n80m3 wmk07n80m3.pdf pdf_icon

WMM071N15HG2

WML07N80M3, W 80M3, WM M3 WMN07N8 MM07N80MWMO0 80M3, WM M3 07N80M3, WMP07N8 MK07N80M 800 Junction ET0V 1.6 Super J n Power MOSFEDescripptionWMOSTM M3 is Wayo neration 800M ons 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G Tand low ga charge perf

MOSTRAR MÁS

Otros transistores... WMM036N12HGS , WMM037N10HGS , WMM040N08HGS , WMM040N15HG2 , WMM043N10HGS , WMM048NV6HG4 , WMM053N10HGS , WMM053NV8HGS , AO4407 , WMM07N60C4 , WML07N60C4 , WMO07N60C4 , WMN07N60C4 , WMP07N60C4 , WMK07N60C4 , WMM07N65C4 , WML07N65C4 .

History: IRF7343PBF | STE45NK80ZD | RU8205BC6 | IPI50N12S3L-15 | NCEP060N10 | SSP65R099SFD

 

 
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