WMM071N15HG2 MOSFET. Datasheet pdf. Equivalent
Type Designator: WMM071N15HG2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 306 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 135 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 65 nC
trⓘ - Rise Time: 21.5 nS
Cossⓘ - Output Capacitance: 389 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0071 Ohm
Package: TO263
WMM071N15HG2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMM071N15HG2 Datasheet (PDF)
wmm071n15hg2.pdf
WMM071N15HG2 150V N-Channel Enhancement Mode Power MOSFET DescriptionWMM071N15HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device Dis well suited for high efficiency fast switching applications.GSFeatures TO-263 V = 150V, I = 135
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Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
