WMM120N04TS Todos los transistores

 ..1. Size:665K  way-on
 wmm120n04ts.pdf

WMM120N04TS 40V N-Channel Enhancement Mode Power MOSFET Description WMM120N04TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet D maintain superior switching performance. G S Features TO-263 V = 40V, I = 170A DS D R

 8.1. Size:702K  way-on
 wmm120p06ts.pdf

WMM120P06TS 60V P-Channel Enhancement Mode Power MOSFET Description WMM120P06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet D maintain superior switching performance. G S Features TO-263 V = -60V, I = -120A DS D R

 9.1. Size:923K  way-on
 wml12n105c2 wmm12n105c2 wmn12n105c2 wmj12n105c2 wmk12n105c2.pdf

WML12N105C2, WMM12N105C2 WMN12N105C2, WMJ12N105C2, WMK12N105C2 1050V 0.68 Super Junction Power MOSFET Description WMOSTM C2 is Wayon s 2nd generation super junction MOSFET family that is utilizing charge S balance technology for extremely low on-resistance S D D G G S D G and low gate charge performance. WMOSTM C2 is TO-220F TO-262 TO-220 suitable for applic

 9.2. Size:653K  way-on
 wml12n100c2 wmm12n100c2 wmn12n100c2 wmj12n100c2 wmk12n100c2.pdf

WML12N100C2, WMM C2 W M12N100C WMN12N WMJ12N10 K12N100C N100C2, W 00C2, WMK C2 1000V 0.68 S unction Power M T Super Ju MOSFET Descrip ption WMOSTM C2 is Wa 2nd generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G and low ga charge performanc WMOSTM C

 9.3. Size:674K  way-on
 wml12n80m3 wmn12n80m3 wmm12n80m3 wmo12n80m3 wmp12n80m3 wmk12n80m3.pdf

WML12N80M3, W 80M3, WM M3 WMN12N8 MM12N80M WMO1 80M3, WM M3 12N80M3, WMP12N8 MK12N80M 800V 0.53 S T V Super Junction Power MOSFET Descrip ption WMOSTM M3 is Wayo neration 800 M on s 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D G G G T and low ga charge perfo