WMM120N04TS. Аналоги и основные параметры
Наименование производителя: WMM120N04TS
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 192 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 170 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 30.5 ns
Cossⓘ - Выходная емкость: 430 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0038 Ohm
Тип корпуса: TO263
Аналог (замена) для WMM120N04TS
- подборⓘ MOSFET транзистора по параметрам
WMM120N04TS даташит
wmm120n04ts.pdf
WMM120N04TS 40V N-Channel Enhancement Mode Power MOSFET Description WMM120N04TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet D maintain superior switching performance. G S Features TO-263 V = 40V, I = 170A DS D R
wmm120p06ts.pdf
WMM120P06TS 60V P-Channel Enhancement Mode Power MOSFET Description WMM120P06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet D maintain superior switching performance. G S Features TO-263 V = -60V, I = -120A DS D R
wml12n105c2 wmm12n105c2 wmn12n105c2 wmj12n105c2 wmk12n105c2.pdf
WML12N105C2, WMM12N105C2 WMN12N105C2, WMJ12N105C2, WMK12N105C2 1050V 0.68 Super Junction Power MOSFET Description WMOSTM C2 is Wayon s 2nd generation super junction MOSFET family that is utilizing charge S balance technology for extremely low on-resistance S D D G G S D G and low gate charge performance. WMOSTM C2 is TO-220F TO-262 TO-220 suitable for applic
wml12n100c2 wmm12n100c2 wmn12n100c2 wmj12n100c2 wmk12n100c2.pdf
WML12N100C2, WMM C2 W M12N100C WMN12N WMJ12N10 K12N100C N100C2, W 00C2, WMK C2 1000V 0.68 S unction Power M T Super Ju MOSFET Descrip ption WMOSTM C2 is Wa 2nd generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G and low ga charge performanc WMOSTM C
Другие MOSFET... WMK10N65C4 , WMM10N70C4 , WML10N70C4 , WMO10N70C4 , WMN10N70C4 , WMP10N70C4 , WMK10N70C4 , WMM115N15HG4 , IRF540 , WMM120P06TS , WMM13N50C4 , WML13N50C4 , WMO13N50C4 , WMN13N50C4 , WMP13N50C4 , WMK13N50C4 , WMM161N15T2 .
History: 2SK3857MFV | BR4953D | STD24N06LT4G | MDV5524URH | SM6128NSKP | PMF250XN
History: 2SK3857MFV | BR4953D | STD24N06LT4G | MDV5524URH | SM6128NSKP | PMF250XN
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