WMO099N10LGS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: WMO099N10LGS

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 89.3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 67 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 28.5 nS

Cossⓘ - Capacitancia de salida: 285 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0099 Ohm

Encapsulados: TO252

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WMO099N10LGS datasheet

 ..1. Size:968K  way-on
 wmo099n10lgs.pdf pdf_icon

WMO099N10LGS

WMO099N10LGS 100V N-Channel Enhancement Mode Power MOSFET Description WMO099N10LGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state D resistance and yet maintain superior switching performance. This device S is well suited for high efficiency fast switching applications. G TO-252 Features V = 100V, I = 67A

 5.1. Size:583K  way-on
 wmo099n10hgs.pdf pdf_icon

WMO099N10LGS

WMO099N10HGS 100V N-Channel Enhancement Mode Power MOSFET Description WMO099N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state D resistance and yet maintain superior switching performance. This S device is well suited for high efficiency fast switching applications. G TO-252 Features V = 100V, I = 67A

 9.1. Size:985K  way-on
 wmo090nv6hg4.pdf pdf_icon

WMO099N10LGS

WMO090NV6HG4 65V N-Channel Enhancement Mode Power MOSFET Description WMO090NV6HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state D resistance and yet maintain superior switching performance. This S G device is well suited for high efficiency fast switching applications. TO-252 Features V = 65V, I = 68

 9.2. Size:636K  way-on
 wmo09n20dm.pdf pdf_icon

WMO099N10LGS

WMO09N20DM 200V 9A 0.3 N-ch Power MOSFET Description WMO09N20DM is Wayon s 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for D applications requiring high power density and high efficiency. And it is S very robust and RoHS compliant. G TO-252 Features V = 200V, I = 9A DS D R

MOSTRAR MÁS

Otros transistores... WMO030N06LG4, WMO048NV6HG4, WMO048NV6LG4, WMO053NV8HGS, WMO060N10HGS, WMO080N10HG2, WMO090NV6HG4, WMO099N10HGS, RFP50N06, WMO09N15TS, WMO09N20DM, WMO09N20DMH, WMO09P10TS, WMO100N07T1, WMO115N15HG4, WMO119N12LG4, WMO120N04TS