WMO099N10LGS. Аналоги и основные параметры

Наименование производителя: WMO099N10LGS

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 89.3 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 67 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 28.5 ns

Cossⓘ - Выходная емкость: 285 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0099 Ohm

Тип корпуса: TO252

Аналог (замена) для WMO099N10LGS

- подборⓘ MOSFET транзистора по параметрам

 

WMO099N10LGS даташит

 ..1. Size:968K  way-on
 wmo099n10lgs.pdf pdf_icon

WMO099N10LGS

WMO099N10LGS 100V N-Channel Enhancement Mode Power MOSFET Description WMO099N10LGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state D resistance and yet maintain superior switching performance. This device S is well suited for high efficiency fast switching applications. G TO-252 Features V = 100V, I = 67A

 5.1. Size:583K  way-on
 wmo099n10hgs.pdf pdf_icon

WMO099N10LGS

WMO099N10HGS 100V N-Channel Enhancement Mode Power MOSFET Description WMO099N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state D resistance and yet maintain superior switching performance. This S device is well suited for high efficiency fast switching applications. G TO-252 Features V = 100V, I = 67A

 9.1. Size:985K  way-on
 wmo090nv6hg4.pdf pdf_icon

WMO099N10LGS

WMO090NV6HG4 65V N-Channel Enhancement Mode Power MOSFET Description WMO090NV6HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state D resistance and yet maintain superior switching performance. This S G device is well suited for high efficiency fast switching applications. TO-252 Features V = 65V, I = 68

 9.2. Size:636K  way-on
 wmo09n20dm.pdf pdf_icon

WMO099N10LGS

WMO09N20DM 200V 9A 0.3 N-ch Power MOSFET Description WMO09N20DM is Wayon s 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for D applications requiring high power density and high efficiency. And it is S very robust and RoHS compliant. G TO-252 Features V = 200V, I = 9A DS D R

ПОКАЗАТЬ ЕЩЁ

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