WMO09N20DMH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: WMO09N20DMH
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 80.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.7 V
   Qgⓘ - Carga de la puerta: 19.1 nC
   trⓘ - Tiempo de subida: 3.3 nS
   Cossⓘ - Capacitancia de salida: 43 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.35 Ohm
   Paquete / Cubierta: TO252

Búsqueda de reemplazo de MOSFET WMO09N20DMH

WMO09N20DMH Datasheet (PDF)

..1. Size:636K way-on
wmo09n20dmh.pdf

WMO09N20DMH 200V 9A 0.35 N-ch Power MOSFET DescriptionWMO09N20DMH is Wayons 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for Dapplications requiring high power density and high efficiency. And it is Svery robust and RoHS compliant. GTO-252Features V = 200V, I = 9A DS DR

4.1. Size:636K way-on
wmo09n20dm.pdf

WMO09N20DM 200V 9A 0.3 N-ch Power MOSFET DescriptionWMO09N20DM is Wayons 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for Dapplications requiring high power density and high efficiency. And it is Svery robust and RoHS compliant. GTO-252Features V = 200V, I = 9A DS DR

8.1. Size:629K way-on
wmo09n15ts.pdf

WMO09N15TS 150V N-Channel Enhancement Mode Power MOSFET DescriptionWMO09N15TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DSFeatures G V = 150V, I = 8.6A DS D TO-252R

9.1. Size:985K way-on
wmo090nv6hg4.pdf

WMO090NV6HG4 65V N-Channel Enhancement Mode Power MOSFET DescriptionWMO090NV6HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This SGdevice is well suited for high efficiency fast switching applications. TO-252Features V = 65V, I = 68

9.2. Size:583K way-on
wmo099n10hgs.pdf

WMO099N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMO099N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This Sdevice is well suited for high efficiency fast switching applications. GTO-252Features V = 100V, I = 67A

9.3. Size:980K way-on
wmo09p10ts.pdf

WMO09P10TS 100V P-Channel Enhancement Mode Power MOSFET DescriptionWMO09P10TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet Dmaintain superior switching performance. SGFeatures TO-252 V = -100V, I = -9A DS DR

9.4. Size:968K way-on
wmo099n10lgs.pdf

WMO099N10LGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMO099N10LGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This device Sis well suited for high efficiency fast switching applications. GTO-252Features V = 100V, I = 67A

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: WSD3067DN56 | SISA18ADN

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