WMO09N20DMH Todos los transistores

 

WMO09N20DMH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WMO09N20DMH
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 80.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.7 V
   Qgⓘ - Carga de la puerta: 19.1 nC
   trⓘ - Tiempo de subida: 3.3 nS
   Cossⓘ - Capacitancia de salida: 43 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.35 Ohm
   Paquete / Cubierta: TO252
 

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WMO09N20DMH Datasheet (PDF)

 ..1. Size:636K  way-on
 wmo09n20dmh.pdf pdf_icon

WMO09N20DMH

WMO09N20DMH 200V 9A 0.35 N-ch Power MOSFET DescriptionWMO09N20DMH is Wayons 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for Dapplications requiring high power density and high efficiency. And it is Svery robust and RoHS compliant. GTO-252Features V = 200V, I = 9A DS DR

 4.1. Size:636K  way-on
 wmo09n20dm.pdf pdf_icon

WMO09N20DMH

WMO09N20DM 200V 9A 0.3 N-ch Power MOSFET DescriptionWMO09N20DM is Wayons 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for Dapplications requiring high power density and high efficiency. And it is Svery robust and RoHS compliant. GTO-252Features V = 200V, I = 9A DS DR

 8.1. Size:629K  way-on
 wmo09n15ts.pdf pdf_icon

WMO09N20DMH

WMO09N15TS 150V N-Channel Enhancement Mode Power MOSFET DescriptionWMO09N15TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DSFeatures G V = 150V, I = 8.6A DS D TO-252R

 9.1. Size:985K  way-on
 wmo090nv6hg4.pdf pdf_icon

WMO09N20DMH

WMO090NV6HG4 65V N-Channel Enhancement Mode Power MOSFET DescriptionWMO090NV6HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This SGdevice is well suited for high efficiency fast switching applications. TO-252Features V = 65V, I = 68

MOSTRAR MÁS

Otros transistores... WMO053NV8HGS , WMO060N10HGS , WMO080N10HG2 , WMO090NV6HG4 , WMO099N10HGS , WMO099N10LGS , WMO09N15TS , WMO09N20DM , 75N75 , WMO09P10TS , WMO100N07T1 , WMO115N15HG4 , WMO119N12LG4 , WMO120N04TS , WMO12P05T1 , WMO12P06TS , WMO13N10TS .

History: SST65R1K2S2E | SSM2307G | RUH30150M | PMV170UN | IRF830ALPBF | CMI80N06

 

 
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