WMO09N20DMH MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: WMO09N20DMH
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 80.6 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 3.7 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 9 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 19.1 nC
trⓘ - Время нарастания: 3.3 ns
Cossⓘ - Выходная емкость: 43 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.35 Ohm
Тип корпуса: TO252
Аналог (замена) для WMO09N20DMH
WMO09N20DMH Datasheet (PDF)
wmo09n20dmh.pdf
WMO09N20DMH 200V 9A 0.35 N-ch Power MOSFET DescriptionWMO09N20DMH is Wayons 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for Dapplications requiring high power density and high efficiency. And it is Svery robust and RoHS compliant. GTO-252Features V = 200V, I = 9A DS DR
wmo09n20dm.pdf
WMO09N20DM 200V 9A 0.3 N-ch Power MOSFET DescriptionWMO09N20DM is Wayons 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for Dapplications requiring high power density and high efficiency. And it is Svery robust and RoHS compliant. GTO-252Features V = 200V, I = 9A DS DR
wmo09n15ts.pdf
WMO09N15TS 150V N-Channel Enhancement Mode Power MOSFET DescriptionWMO09N15TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DSFeatures G V = 150V, I = 8.6A DS D TO-252R
wmo090nv6hg4.pdf
WMO090NV6HG4 65V N-Channel Enhancement Mode Power MOSFET DescriptionWMO090NV6HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This SGdevice is well suited for high efficiency fast switching applications. TO-252Features V = 65V, I = 68
wmo099n10hgs.pdf
WMO099N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMO099N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This Sdevice is well suited for high efficiency fast switching applications. GTO-252Features V = 100V, I = 67A
wmo09p10ts.pdf
WMO09P10TS 100V P-Channel Enhancement Mode Power MOSFET DescriptionWMO09P10TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet Dmaintain superior switching performance. SGFeatures TO-252 V = -100V, I = -9A DS DR
wmo099n10lgs.pdf
WMO099N10LGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMO099N10LGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This device Sis well suited for high efficiency fast switching applications. GTO-252Features V = 100V, I = 67A
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
Список транзисторов
Обновления
MOSFET: SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD | SRN1660F