WMO115N15HG4 Todos los transistores

 

WMO115N15HG4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WMO115N15HG4
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 156.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 85 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 268 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm
   Paquete / Cubierta: TO252
 

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WMO115N15HG4 Datasheet (PDF)

 ..1. Size:611K  way-on
wmo115n15hg4.pdf pdf_icon

WMO115N15HG4

WMO115N15HG4 150V N-Channel Enhancement Mode Power MOSFET DescriptionWMO115N15HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This Sdevice is well suited for high efficiency fast switching applications. GTO-252Features V = 150V, I =

 9.1. Size:992K  way-on
wmo119n12lg4.pdf pdf_icon

WMO115N15HG4

WMO119N12LG4 120V N-Channel Enhancement Mode Power MOSFET DescriptionWMO119N12LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This device SGis well suited for high efficiency fast switching applications. TO-252Features V = 120V, I = 65

 9.2. Size:674K  way-on
wml11n80m3 wmn11n80m3 wmm11n80m3 wmo11n80m3 wmp11n80m3 wmk11n80m3.pdf pdf_icon

WMO115N15HG4

WML11N80M3, W 80M3, WM M3 WMN11N8 MM11N80MWMO1 80M3, WM M3 11N80M3, WMP11N8 MK11N80M 800V 0.68 S TV Super Junction Power MOSFETDescripptionWMOSTM M3 is Wayo neration 800M ons 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G Tand low ga charge perfo

 9.3. Size:664K  way-on
wml11n70sr wmk11n70sr wmm11n70sr wmn11n70sr wmp11n70sr wmo11n70sr.pdf pdf_icon

WMO115N15HG4

WML11N70SR, W 70SR, WM SR WMK11N7 MM11N70S WMN11N70SR, WMP11N7 MO11N70S70SR, WM SR 700V 0.5 Su nction Puper Jun Power MOSFETDescripptionWMOSTM SR is Wa new generation super ayons w junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G Tand low ga charge performanc W

Otros transistores... WMO090NV6HG4 , WMO099N10HGS , WMO099N10LGS , WMO09N15TS , WMO09N20DM , WMO09N20DMH , WMO09P10TS , WMO100N07T1 , IRFB31N20D , WMO119N12LG4 , WMO120N04TS , WMO12P05T1 , WMO12P06TS , WMO13N10TS , WMO13P06T1 , WMO13P10TS , WMO140NV6LG4 .

History: RP1L080SN | WMO099N10LGS | UT3N06G-AE3 | STP20NM60A | IPI029N06N | AP9918J | DMN2004VK

 

 
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