WMO115N15HG4 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WMO115N15HG4
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 156.2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 85 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 12 nS
Cossⓘ - Capacitancia de salida: 268 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de WMO115N15HG4 MOSFET
WMO115N15HG4 datasheet
wmo115n15hg4.pdf
WMO115N15HG4 150V N-Channel Enhancement Mode Power MOSFET Description WMO115N15HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state D resistance and yet maintain superior switching performance. This S device is well suited for high efficiency fast switching applications. G TO-252 Features V = 150V, I =
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WMO119N12LG4 120V N-Channel Enhancement Mode Power MOSFET Description WMO119N12LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state D resistance and yet maintain superior switching performance. This device S G is well suited for high efficiency fast switching applications. TO-252 Features V = 120V, I = 65
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