WMO115N15HG4 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: WMO115N15HG4
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 156.2 W
Предельно допустимое напряжение сток-исток |Uds|: 150 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 3.6 V
Максимально допустимый постоянный ток стока |Id|: 85 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 45 nC
Время нарастания (tr): 12 ns
Выходная емкость (Cd): 268 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.012 Ohm
Тип корпуса: TO252
Аналог (замена) для WMO115N15HG4
WMO115N15HG4 Datasheet (PDF)
wmo115n15hg4.pdf
WMO115N15HG4 150V N-Channel Enhancement Mode Power MOSFET DescriptionWMO115N15HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This Sdevice is well suited for high efficiency fast switching applications. GTO-252Features V = 150V, I =
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WMO119N12LG4 120V N-Channel Enhancement Mode Power MOSFET DescriptionWMO119N12LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This device SGis well suited for high efficiency fast switching applications. TO-252Features V = 120V, I = 65
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