WMO12P05T1 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: WMO12P05T1

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 39 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 12 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 46 nS

Cossⓘ - Capacitancia de salida: 35 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.16 Ohm

Encapsulados: TO252

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WMO12P05T1 datasheet

 ..1. Size:590K  way-on
 wmo12p05t1.pdf pdf_icon

WMO12P05T1

WMO12P05T1 55V P-Channel Enhancement Mode Power MOSFET Description WMO12P05T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. D Features S G V = -55V, I = -12A DS D TO-252 R

 7.1. Size:983K  way-on
 wmo12p06ts.pdf pdf_icon

WMO12P05T1

WMO12P06TS 60V P-Channel Enhancement Mode Power MOSFET Description WMO12P06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet D maintain superior switching performance. S G Features TO-252 V = -60V, I = -20A DS D R

 9.1. Size:600K  way-on
 wmo120n04ts.pdf pdf_icon

WMO12P05T1

WMO120N04TS 40V N-Channel Enhancement Mode Power MOSFET Description WMO120N04TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. D S Features G V = 40V, I = 120A DS D TO-252 R

 9.2. Size:674K  way-on
 wml12n80m3 wmn12n80m3 wmm12n80m3 wmo12n80m3 wmp12n80m3 wmk12n80m3.pdf pdf_icon

WMO12P05T1

WML12N80M3, W 80M3, WM M3 WMN12N8 MM12N80M WMO1 80M3, WM M3 12N80M3, WMP12N8 MK12N80M 800V 0.53 S T V Super Junction Power MOSFET Descrip ption WMOSTM M3 is Wayo neration 800 M on s 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D G G G T and low ga charge perfo

MOSTRAR MÁS

Otros transistores... WMO09N15TS, WMO09N20DM, WMO09N20DMH, WMO09P10TS, WMO100N07T1, WMO115N15HG4, WMO119N12LG4, WMO120N04TS, 2N60, WMO12P06TS, WMO13N10TS, WMO13P06T1, WMO13P10TS, WMO140NV6LG4, WMO15N10T1, WMO15N12TS, WMO15N15T1