Справочник MOSFET. WMO12P05T1

 

WMO12P05T1 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: WMO12P05T1
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 39 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 55 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 12 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 20 nC
   trⓘ - Время нарастания: 46 ns
   Cossⓘ - Выходная емкость: 35 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.16 Ohm
   Тип корпуса: TO252

 Аналог (замена) для WMO12P05T1

 

 

WMO12P05T1 Datasheet (PDF)

 ..1. Size:590K  way-on
 wmo12p05t1.pdf

WMO12P05T1 WMO12P05T1

WMO12P05T1 55V P-Channel Enhancement Mode Power MOSFET DescriptionWMO12P05T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DFeatures SG V = -55V, I = -12A DS DTO-252R

 7.1. Size:983K  way-on
 wmo12p06ts.pdf

WMO12P05T1 WMO12P05T1

WMO12P06TS 60V P-Channel Enhancement Mode Power MOSFET DescriptionWMO12P06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet Dmaintain superior switching performance. SGFeatures TO-252 V = -60V, I = -20A DS DR

 9.1. Size:600K  way-on
 wmo120n04ts.pdf

WMO12P05T1 WMO12P05T1

WMO120N04TS 40V N-Channel Enhancement Mode Power MOSFET DescriptionWMO120N04TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DSFeatures G V = 40V, I = 120A DS DTO-252R

 9.2. Size:674K  way-on
 wml12n80m3 wmn12n80m3 wmm12n80m3 wmo12n80m3 wmp12n80m3 wmk12n80m3.pdf

WMO12P05T1 WMO12P05T1

WML12N80M3, W 80M3, WM M3 WMN12N8 MM12N80MWMO1 80M3, WM M3 12N80M3, WMP12N8 MK12N80M 800V 0.53 S TV Super Junction Power MOSFETDescripptionWMOSTM M3 is Wayo neration 800M ons 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G Tand low ga charge perfo

Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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