WMO12P05T1. Аналоги и основные параметры

Наименование производителя: WMO12P05T1

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 39 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 55 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 12 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 46 ns

Cossⓘ - Выходная емкость: 35 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.16 Ohm

Тип корпуса: TO252

Аналог (замена) для WMO12P05T1

- подборⓘ MOSFET транзистора по параметрам

 

WMO12P05T1 даташит

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 wmo12p05t1.pdf pdf_icon

WMO12P05T1

WMO12P05T1 55V P-Channel Enhancement Mode Power MOSFET Description WMO12P05T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. D Features S G V = -55V, I = -12A DS D TO-252 R

 7.1. Size:983K  way-on
 wmo12p06ts.pdf pdf_icon

WMO12P05T1

WMO12P06TS 60V P-Channel Enhancement Mode Power MOSFET Description WMO12P06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet D maintain superior switching performance. S G Features TO-252 V = -60V, I = -20A DS D R

 9.1. Size:600K  way-on
 wmo120n04ts.pdf pdf_icon

WMO12P05T1

WMO120N04TS 40V N-Channel Enhancement Mode Power MOSFET Description WMO120N04TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. D S Features G V = 40V, I = 120A DS D TO-252 R

 9.2. Size:674K  way-on
 wml12n80m3 wmn12n80m3 wmm12n80m3 wmo12n80m3 wmp12n80m3 wmk12n80m3.pdf pdf_icon

WMO12P05T1

WML12N80M3, W 80M3, WM M3 WMN12N8 MM12N80M WMO1 80M3, WM M3 12N80M3, WMP12N8 MK12N80M 800V 0.53 S T V Super Junction Power MOSFET Descrip ption WMOSTM M3 is Wayo neration 800 M on s 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D G G G T and low ga charge perfo

ПОКАЗАТЬ ЕЩЁ

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