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WMO12P06TS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WMO12P06TS
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 62.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 12.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5.2 nS
   Cossⓘ - Capacitancia de salida: 45 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.11 Ohm
   Paquete / Cubierta: TO252

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WMO12P06TS Datasheet (PDF)

 ..1. Size:983K  way-on
wmo12p06ts.pdf

WMO12P06TS
WMO12P06TS

WMO12P06TS 60V P-Channel Enhancement Mode Power MOSFET DescriptionWMO12P06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet Dmaintain superior switching performance. SGFeatures TO-252 V = -60V, I = -20A DS DR

 7.1. Size:590K  way-on
wmo12p05t1.pdf

WMO12P06TS
WMO12P06TS

WMO12P05T1 55V P-Channel Enhancement Mode Power MOSFET DescriptionWMO12P05T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DFeatures SG V = -55V, I = -12A DS DTO-252R

 9.1. Size:600K  way-on
wmo120n04ts.pdf

WMO12P06TS
WMO12P06TS

WMO120N04TS 40V N-Channel Enhancement Mode Power MOSFET DescriptionWMO120N04TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DSFeatures G V = 40V, I = 120A DS DTO-252R

 9.2. Size:674K  way-on
wml12n80m3 wmn12n80m3 wmm12n80m3 wmo12n80m3 wmp12n80m3 wmk12n80m3.pdf

WMO12P06TS
WMO12P06TS

WML12N80M3, W 80M3, WM M3 WMN12N8 MM12N80MWMO1 80M3, WM M3 12N80M3, WMP12N8 MK12N80M 800V 0.53 S TV Super Junction Power MOSFETDescripptionWMOSTM M3 is Wayo neration 800M ons 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G Tand low ga charge perfo

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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