WMO12P06TS - аналоги и даташиты транзистора

 

 

WMO12P06TS - Даташиты. Аналоги. Основные параметры


   Наименование производителя: WMO12P06TS
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 62.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 12.5 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 5.2 ns
   Cossⓘ - Выходная емкость: 45 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.11 Ohm
   Тип корпуса: TO252
 

 Аналог (замена) для WMO12P06TS

   - подбор ⓘ MOSFET транзистора по параметрам

 

 

WMO12P06TS Datasheet (PDF)

 ..1. Size:983K  way-on
 wmo12p06ts.pdf pdf_icon

WMO12P06TS

WMO12P06TS 60V P-Channel Enhancement Mode Power MOSFET DescriptionWMO12P06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet Dmaintain superior switching performance. SGFeatures TO-252 V = -60V, I = -20A DS DR

 7.1. Size:590K  way-on
 wmo12p05t1.pdf pdf_icon

WMO12P06TS

WMO12P05T1 55V P-Channel Enhancement Mode Power MOSFET DescriptionWMO12P05T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DFeatures SG V = -55V, I = -12A DS DTO-252R

 9.1. Size:600K  way-on
 wmo120n04ts.pdf pdf_icon

WMO12P06TS

WMO120N04TS 40V N-Channel Enhancement Mode Power MOSFET DescriptionWMO120N04TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DSFeatures G V = 40V, I = 120A DS DTO-252R

 9.2. Size:674K  way-on
 wml12n80m3 wmn12n80m3 wmm12n80m3 wmo12n80m3 wmp12n80m3 wmk12n80m3.pdf pdf_icon

WMO12P06TS

WML12N80M3, W 80M3, WM M3 WMN12N8 MM12N80MWMO1 80M3, WM M3 12N80M3, WMP12N8 MK12N80M 800V 0.53 S TV Super Junction Power MOSFETDescripptionWMOSTM M3 is Wayo neration 800M ons 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G Tand low ga charge perfo

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... WMO09N20DM , WMO09N20DMH , WMO09P10TS , WMO100N07T1 , WMO115N15HG4 , WMO119N12LG4 , WMO120N04TS , WMO12P05T1 , 8N60 , WMO13N10TS , WMO13P06T1 , WMO13P10TS , WMO140NV6LG4 , WMO15N10T1 , WMO15N12TS , WMO15N15T1 , WMO15N25T2 .

 

 
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