WMO15N25T2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WMO15N25T2
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 78.1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 15 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5.8 nS
Cossⓘ - Capacitancia de salida: 31 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.238 Ohm
Paquete / Cubierta: TO252
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WMO15N25T2 Datasheet (PDF)
wmo15n25t2.pdf

WMO15N25T2 250V N-Channel Enhancement Mode Power MOSFET DescriptionWMO15N25T2 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DSFeatures GTO-252 V = 250V, I = 15A DS DR
wml15n60c4 wmk15n60c4 wmm15n60c4 wmn15n60c4 wmp15n60c4 wmo15n60c4.pdf

WML1 MM15N60C15N60C4, WMK15N60C4, WM C4 WMN15N60C4, WMP15N60C4, WM C4 MO15N60C 600V n Power MOSFETV 0.26 Super JunctionDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WMOSTM C4
wml15n65c4 wmk15n65c4 wmm15n65c4 wmn15n65c4 wmp15n65c4 wmo15n65c4.pdf

WML1 MM15N65C15N65C4, WMK15N65C4, WM C4 WMN15N65C4, WMP15N65C4, WM C4 MO15N65C 650V n Power MOSFETV 0.26 Super JunctionDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WMOSTM C4
wmo15n10t1.pdf

WMO15N10T1 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMO15N10T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet Dmaintain superior switching performance. SGFeatures TO-252 V = 100V, I = 14.6A DS DR
Otros transistores... WMO12P06TS , WMO13N10TS , WMO13P06T1 , WMO13P10TS , WMO140NV6LG4 , WMO15N10T1 , WMO15N12TS , WMO15N15T1 , 60N06 , WMO175N10HG4 , WMO175N10LG4 , WMO18N20T2 , WMO18P10TS , WMO190N03TS , WMO190N15HG4 , WMO20N15T2 , WMO20P04T1 .
History: RQK0608BQDQS | 2SK3312K | FTK3N80I | 2SJ162 | 2SK3127B
History: RQK0608BQDQS | 2SK3312K | FTK3N80I | 2SJ162 | 2SK3127B



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