WMO15N25T2 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: WMO15N25T2

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 78.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 250 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 15 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5.8 nS

Cossⓘ - Capacitancia de salida: 31 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.238 Ohm

Encapsulados: TO252

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WMO15N25T2 datasheet

 ..1. Size:511K  way-on
 wmo15n25t2.pdf pdf_icon

WMO15N25T2

WMO15N25T2 250V N-Channel Enhancement Mode Power MOSFET Description WMO15N25T2 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. D S Features G TO-252 V = 250V, I = 15A DS D R

 8.1. Size:666K  way-on
 wml15n60c4 wmk15n60c4 wmm15n60c4 wmn15n60c4 wmp15n60c4 wmo15n60c4.pdf pdf_icon

WMO15N25T2

WML1 MM15N60C 15N60C4, WMK15N60C4, WM C4 WMN15N60C4, WMP15N60C4, WM C4 MO15N60C 600V n Power MOSFET V 0.26 Super Junction Descrip ption WMOSTM C4 is Wa 4th generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re D S D G G G S D G and low ga charge performanc WMOSTM C4

 8.2. Size:669K  way-on
 wml15n65c4 wmk15n65c4 wmm15n65c4 wmn15n65c4 wmp15n65c4 wmo15n65c4.pdf pdf_icon

WMO15N25T2

WML1 MM15N65C 15N65C4, WMK15N65C4, WM C4 WMN15N65C4, WMP15N65C4, WM C4 MO15N65C 650V n Power MOSFET V 0.26 Super Junction Descrip ption WMOSTM C4 is Wa 4th generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re D S D G G G S D G and low ga charge performanc WMOSTM C4

 8.3. Size:436K  way-on
 wmo15n10t1.pdf pdf_icon

WMO15N25T2

WMO15N10T1 100V N-Channel Enhancement Mode Power MOSFET Description WMO15N10T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet D maintain superior switching performance. S G Features TO-252 V = 100V, I = 14.6A DS D R

MOSTRAR MÁS

Otros transistores... WMO12P06TS, WMO13N10TS, WMO13P06T1, WMO13P10TS, WMO140NV6LG4, WMO15N10T1, WMO15N12TS, WMO15N15T1, IRFZ48N, WMO175N10HG4, WMO175N10LG4, WMO18N20T2, WMO18P10TS, WMO190N03TS, WMO190N15HG4, WMO20N15T2, WMO20P04T1