WMO35N06T1 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: WMO35N06T1

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 44.6 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 35 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 32.8 nS

Cossⓘ - Capacitancia de salida: 90 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm

Encapsulados: TO252

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WMO35N06T1 datasheet

 ..1. Size:466K  way-on
 wmo35n06t1.pdf pdf_icon

WMO35N06T1

WMO35N06T1 60V N-Channel Enhancement Mode Power MOSFET Description WMO35N06T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain D superior switching performance. S G Features TO-252 V = 60V, I = 35A DS D R

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 wmo35p04t1.pdf pdf_icon

WMO35N06T1

WMO35P04T1 40V P-Channel Enhancement Mode Power MOSFET Description WMO35P04T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. D Features S V = -40V, I = -35A DS D G TO-252 R

 9.2. Size:605K  way-on
 wmo35p06ts.pdf pdf_icon

WMO35N06T1

WMO35P06TS 60V P-Channel Enhancement Mode Power MOSFET Description WMO35P06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. D Features S V = -60V, I = -35A G DS D TO-252 R

Otros transistores... WMO25P03TS, WMO25P04TS, WMO25P06T1, WMO28N15T2, WMO2N100D1, WMAA2N100D1, WMO30P03TS, WMO30P10TS, 20N60, WMO35P04T1, WMO35P06TS, WMO40N04TS, WMO50P03T1, WMO50P04T1, WMO55N03T1, WMO5N50D1B, WMO60N02T1