WMO35P06TS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: WMO35P06TS

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 58 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 35 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 25 nS

Cossⓘ - Capacitancia de salida: 168 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm

Encapsulados: TO252

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WMO35P06TS datasheet

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WMO35P06TS

WMO35P06TS 60V P-Channel Enhancement Mode Power MOSFET Description WMO35P06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. D Features S V = -60V, I = -35A G DS D TO-252 R

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 wmo35p04t1.pdf pdf_icon

WMO35P06TS

WMO35P04T1 40V P-Channel Enhancement Mode Power MOSFET Description WMO35P04T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. D Features S V = -40V, I = -35A DS D G TO-252 R

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 wmo35n06t1.pdf pdf_icon

WMO35P06TS

WMO35N06T1 60V N-Channel Enhancement Mode Power MOSFET Description WMO35N06T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain D superior switching performance. S G Features TO-252 V = 60V, I = 35A DS D R

Otros transistores... WMO25P06T1, WMO28N15T2, WMO2N100D1, WMAA2N100D1, WMO30P03TS, WMO30P10TS, WMO35N06T1, WMO35P04T1, IRF540, WMO40N04TS, WMO50P03T1, WMO50P04T1, WMO55N03T1, WMO5N50D1B, WMO60N02T1, WMO60N04T1, WMO60P02TS