WMO35P06TS Specs and Replacement

Type Designator: WMO35P06TS

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 58 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 168 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm

Package: TO252

WMO35P06TS substitution

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WMO35P06TS datasheet

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 wmo35p06ts.pdf pdf_icon

WMO35P06TS

WMO35P06TS 60V P-Channel Enhancement Mode Power MOSFET Description WMO35P06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. D Features S V = -60V, I = -35A G DS D TO-252 R ... See More ⇒

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 wmo35p04t1.pdf pdf_icon

WMO35P06TS

WMO35P04T1 40V P-Channel Enhancement Mode Power MOSFET Description WMO35P04T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. D Features S V = -40V, I = -35A DS D G TO-252 R ... See More ⇒

 9.1. Size:466K  way-on
 wmo35n06t1.pdf pdf_icon

WMO35P06TS

WMO35N06T1 60V N-Channel Enhancement Mode Power MOSFET Description WMO35N06T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain D superior switching performance. S G Features TO-252 V = 60V, I = 35A DS D R ... See More ⇒

Detailed specifications: WMO25P06T1, WMO28N15T2, WMO2N100D1, WMAA2N100D1, WMO30P03TS, WMO30P10TS, WMO35N06T1, WMO35P04T1, IRF540, WMO40N04TS, WMO50P03T1, WMO50P04T1, WMO55N03T1, WMO5N50D1B, WMO60N02T1, WMO60N04T1, WMO60P02TS

Keywords - WMO35P06TS MOSFET specs

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