All MOSFET. WMO35P06TS Datasheet

 

WMO35P06TS MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMO35P06TS
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 58 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 35 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 75 nC
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 168 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
   Package: TO252

 WMO35P06TS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMO35P06TS Datasheet (PDF)

 ..1. Size:605K  way-on
 wmo35p06ts.pdf

WMO35P06TS WMO35P06TS

WMO35P06TS 60V P-Channel Enhancement Mode Power MOSFET DescriptionWMO35P06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DFeatures S V = -60V, I = -35A GDS DTO-252R

 7.1. Size:608K  way-on
 wmo35p04t1.pdf

WMO35P06TS WMO35P06TS

WMO35P04T1 40V P-Channel Enhancement Mode Power MOSFET DescriptionWMO35P04T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DFeatures S V = -40V, I = -35A DS DGTO-252R

 9.1. Size:466K  way-on
 wmo35n06t1.pdf

WMO35P06TS WMO35P06TS

WMO35N06T1 60V N-Channel Enhancement Mode Power MOSFET DescriptionWMO35N06T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain Dsuperior switching performance. SGFeatures TO-252 V = 60V, I = 35A DS D R

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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