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WMO60N02T1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WMO60N02T1
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 35.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 60 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 V
   Qgⓘ - Carga de la puerta: 24 nC
   trⓘ - Tiempo de subida: 23.4 nS
   Cossⓘ - Capacitancia de salida: 308 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm
   Paquete / Cubierta: TO252

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WMO60N02T1 Datasheet (PDF)

 ..1. Size:1003K  way-on
wmo60n02t1.pdf

WMO60N02T1
WMO60N02T1

WMO60N02T1 20V N-Channel Enhancement Mode Power MOSFET DescriptionWMO60N02T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DSFeatures G V = 20V, I = 60A DS DTO-252R

 7.1. Size:605K  way-on
wmo60n04t1.pdf

WMO60N02T1
WMO60N02T1

WMO60N04T1 40V N-Channel Enhancement Mode Power MOSFET DescriptionWMO60N04T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet Dmaintain superior switching performance. SGFeatures TO-252 V = 40V, I = 60A DS DR

 9.1. Size:612K  way-on
wmo60p02ts.pdf

WMO60N02T1
WMO60N02T1

WMO60P02TS 20V P-Channel Enhancement Mode Power MOSFET DescriptionWMO60P02TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DSFeatures G V = -20V, I = -60A DS DTO-252R

 9.2. Size:604K  way-on
wmo60p03ts.pdf

WMO60N02T1
WMO60N02T1

WMO60P03TS 30V P-Channel Enhancement Mode Power MOSFET DescriptionWMO60P03TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DFeatures SG V = -30V, I = -60A DS DTO-252R

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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