WMO60N02T1. Аналоги и основные параметры

Наименование производителя: WMO60N02T1

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 35.7 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 20 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 10 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 60 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 23.4 ns

Cossⓘ - Выходная емкость: 308 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.006 Ohm

Тип корпуса: TO252

Аналог (замена) для WMO60N02T1

- подборⓘ MOSFET транзистора по параметрам

 

WMO60N02T1 даташит

 ..1. Size:1003K  way-on
 wmo60n02t1.pdf pdf_icon

WMO60N02T1

WMO60N02T1 20V N-Channel Enhancement Mode Power MOSFET Description WMO60N02T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. D S Features G V = 20V, I = 60A DS D TO-252 R

 7.1. Size:605K  way-on
 wmo60n04t1.pdf pdf_icon

WMO60N02T1

WMO60N04T1 40V N-Channel Enhancement Mode Power MOSFET Description WMO60N04T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet D maintain superior switching performance. S G Features TO-252 V = 40V, I = 60A DS D R

 9.1. Size:612K  way-on
 wmo60p02ts.pdf pdf_icon

WMO60N02T1

WMO60P02TS 20V P-Channel Enhancement Mode Power MOSFET Description WMO60P02TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. D S Features G V = -20V, I = -60A DS D TO-252 R

 9.2. Size:604K  way-on
 wmo60p03ts.pdf pdf_icon

WMO60N02T1

WMO60P03TS 30V P-Channel Enhancement Mode Power MOSFET Description WMO60P03TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. D Features S G V = -30V, I = -60A DS D TO-252 R

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... WMO35N06T1, WMO35P04T1, WMO35P06TS, WMO40N04TS, WMO50P03T1, WMO50P04T1, WMO55N03T1, WMO5N50D1B, IRLZ44N, WMO60N04T1, WMO60P02TS, WMO60P03TS, WMO690N15HG2, WMO6N80D1, WML6N80D1, WMO75N04T1, WMO80N03T1