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WMO60P02TS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WMO60P02TS
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 45 W
   Voltaje máximo drenador - fuente |Vds|: 20 V
   Voltaje máximo fuente - puerta |Vgs|: 10 V
   Corriente continua de drenaje |Id|: 60 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 1 V
   Carga de la puerta (Qg): 43 nC
   Tiempo de subida (tr): 20.2 nS
   Conductancia de drenaje-sustrato (Cd): 498 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0082 Ohm
   Paquete / Cubierta: TO252

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WMO60P02TS Datasheet (PDF)

 ..1. Size:612K  way-on
wmo60p02ts.pdf

WMO60P02TS
WMO60P02TS

WMO60P02TS 20V P-Channel Enhancement Mode Power MOSFET DescriptionWMO60P02TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DSFeatures G V = -20V, I = -60A DS DTO-252R

 7.1. Size:604K  way-on
wmo60p03ts.pdf

WMO60P02TS
WMO60P02TS

WMO60P03TS 30V P-Channel Enhancement Mode Power MOSFET DescriptionWMO60P03TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DFeatures SG V = -30V, I = -60A DS DTO-252R

 9.1. Size:1003K  way-on
wmo60n02t1.pdf

WMO60P02TS
WMO60P02TS

WMO60N02T1 20V N-Channel Enhancement Mode Power MOSFET DescriptionWMO60N02T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DSFeatures G V = 20V, I = 60A DS DTO-252R

 9.2. Size:605K  way-on
wmo60n04t1.pdf

WMO60P02TS
WMO60P02TS

WMO60N04T1 40V N-Channel Enhancement Mode Power MOSFET DescriptionWMO60N04T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet Dmaintain superior switching performance. SGFeatures TO-252 V = 40V, I = 60A DS DR

Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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