All MOSFET. WMO60P02TS Datasheet

 

WMO60P02TS Datasheet and Replacement


   Type Designator: WMO60P02TS
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 43 nC
   tr ⓘ - Rise Time: 20.2 nS
   Cossⓘ - Output Capacitance: 498 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0082 Ohm
   Package: TO252
 

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WMO60P02TS Datasheet (PDF)

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WMO60P02TS

WMO60P02TS 20V P-Channel Enhancement Mode Power MOSFET DescriptionWMO60P02TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DSFeatures G V = -20V, I = -60A DS DTO-252R

 7.1. Size:604K  way-on
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WMO60P02TS

WMO60P03TS 30V P-Channel Enhancement Mode Power MOSFET DescriptionWMO60P03TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DFeatures SG V = -30V, I = -60A DS DTO-252R

 9.1. Size:1003K  way-on
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WMO60P02TS

WMO60N02T1 20V N-Channel Enhancement Mode Power MOSFET DescriptionWMO60N02T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DSFeatures G V = 20V, I = 60A DS DTO-252R

 9.2. Size:605K  way-on
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WMO60P02TS

WMO60N04T1 40V N-Channel Enhancement Mode Power MOSFET DescriptionWMO60N04T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet Dmaintain superior switching performance. SGFeatures TO-252 V = 40V, I = 60A DS DR

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History: IRFIBE30G

Keywords - WMO60P02TS MOSFET datasheet

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