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WMO60P03TS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WMO60P03TS
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 54.4 W
   Voltaje máximo drenador - fuente |Vds|: 30 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 60 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
   Carga de la puerta (Qg): 35 nC
   Tiempo de subida (tr): 13.2 nS
   Conductancia de drenaje-sustrato (Cd): 465 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0087 Ohm
   Paquete / Cubierta: TO252

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WMO60P03TS Datasheet (PDF)

 ..1. Size:604K  way-on
wmo60p03ts.pdf

WMO60P03TS
WMO60P03TS

WMO60P03TS 30V P-Channel Enhancement Mode Power MOSFET DescriptionWMO60P03TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DFeatures SG V = -30V, I = -60A DS DTO-252R

 7.1. Size:612K  way-on
wmo60p02ts.pdf

WMO60P03TS
WMO60P03TS

WMO60P02TS 20V P-Channel Enhancement Mode Power MOSFET DescriptionWMO60P02TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DSFeatures G V = -20V, I = -60A DS DTO-252R

 9.1. Size:1003K  way-on
wmo60n02t1.pdf

WMO60P03TS
WMO60P03TS

WMO60N02T1 20V N-Channel Enhancement Mode Power MOSFET DescriptionWMO60N02T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DSFeatures G V = 20V, I = 60A DS DTO-252R

 9.2. Size:605K  way-on
wmo60n04t1.pdf

WMO60P03TS
WMO60P03TS

WMO60N04T1 40V N-Channel Enhancement Mode Power MOSFET DescriptionWMO60N04T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet Dmaintain superior switching performance. SGFeatures TO-252 V = 40V, I = 60A DS DR

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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