WMO60P03TS Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: WMO60P03TS
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 54.4 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 60 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 13.2 ns
Cossⓘ - Выходная емкость: 465 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0087 Ohm
Тип корпуса: TO252
- подбор MOSFET транзистора по параметрам
WMO60P03TS Datasheet (PDF)
wmo60p03ts.pdf

WMO60P03TS 30V P-Channel Enhancement Mode Power MOSFET DescriptionWMO60P03TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DFeatures SG V = -30V, I = -60A DS DTO-252R
wmo60p02ts.pdf

WMO60P02TS 20V P-Channel Enhancement Mode Power MOSFET DescriptionWMO60P02TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DSFeatures G V = -20V, I = -60A DS DTO-252R
wmo60n02t1.pdf

WMO60N02T1 20V N-Channel Enhancement Mode Power MOSFET DescriptionWMO60N02T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DSFeatures G V = 20V, I = 60A DS DTO-252R
wmo60n04t1.pdf

WMO60N04T1 40V N-Channel Enhancement Mode Power MOSFET DescriptionWMO60N04T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet Dmaintain superior switching performance. SGFeatures TO-252 V = 40V, I = 60A DS DR
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: AFN4134W | AP2306CGN-HF | IRL3803VPBF | IRF9328PBF | ZXM66N02N8TA | R6520KNZ1 | IRHYS597034CM
History: AFN4134W | AP2306CGN-HF | IRL3803VPBF | IRF9328PBF | ZXM66N02N8TA | R6520KNZ1 | IRHYS597034CM



Список транзисторов
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