FDS2582 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDS2582
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 19 nS
   Cossⓘ - Capacitancia de salida: 150 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.066 Ohm
   Paquete / Cubierta: SO-8

Búsqueda de reemplazo de MOSFET FDS2582

FDS2582 Datasheet (PDF)

..1. Size:283K fairchild semi
fds2582.pdf

September 2002FDS2582N-Channel PowerTrench MOSFET150V, 4.1A, 66mFeatures Applications rDS(ON) = 57m (Typ.), VGS = 10V, ID = 4.1A DC/DC converters and Off-Line UPS Qg(tot) = 19nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchronous Rect

..2. Size:806K cn vbsemi
fds2582.pdf

FDS2582www.VBsemi.twN-Channel 150 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.080 at VGS = 10 V 5.4 Extremely Low Qgd for Switching Losses150 23 nC0.085 at VGS = 8 V 4.5 100 % Rg Tested 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/ECDAPPLICATIONSSO-8

9.1. Size:273K fairchild semi
fds2572.pdf

October 2001FDS2572150V, 0.047 Ohms, 4.9A, N-Channel UltraFET Trench MOSFETGeneral Description FeaturesUltraFET devices combine characteristics that enable RDS(ON) = 0.040 (Typ.), VGS = 10V benchmark efficiency in power conversion applications. Qg(TOT) = 29nC (Typ.), VGS = 10VOptimized for Rds(on), low ESR, low total and Miller gatecharge, these devices are ideal f

9.2. Size:386K onsemi
fds2572.pdf

July 2013FDS2572150V, 0.047 Ohms, 4.9A, N-Channel UltraFET Trench MOSFETGeneral Description FeaturesUltraFET devices combine characteristics that enable RDS(ON) = 0.040 (Typ.), VGS = 10V benchmark efficiency in power conversion applications. Qg(TOT) = 29nC (Typ.), VGS = 10VOptimized for Rds(on), low ESR, low total and Miller gatecharge, these devices are ideal for

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