WMO80N03T1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WMO80N03T1
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 59.5 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 80 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tiempo de subida (tr): 16 nS
Conductancia de drenaje-sustrato (Cd): 277 pF
Resistencia entre drenaje y fuente RDS(on): 0.0055 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de MOSFET WMO80N03T1
WMO80N03T1 Datasheet (PDF)
wmo80n03t1.pdf
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WMO80N03T1 30V N-Channel Enhancement Mode Power MOSFET DescriptionWMO80N03T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DSFeatures GTO-252 V = 30V, I = 80A DS DR
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WMO80N06TS 60V N-Channel Enhancement Mode Power MOSFET DescriptionWMO80N06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DSFeatures G V = 60V, I = 80A DS DTO-252R
wmo80n08ts.pdf
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WMO80N08TS 80V N-Channel Enhancement Mode Power MOSFET DescriptionWMO80N08TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain Dsuperior switching performance. SGFeatures TO-252 V = 80V, I = 80A DS DR
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WMM R720S, WM 0S M80R720S, WMN80R MK80R720WML R720S, WM 0S L80R720S, WMP80R MO80R720 800V 0.68 S unction Power M TSuper Ju MOSFETDescripptionWMOSTM S is Way new generation super yons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G and low gate charge performan WMO
wmo80p04ts.pdf
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WMO80P04TS 40V P-Channel Enhancement Mode Power MOSFET DescriptionWMO80P04TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.DSFeatures GTO-252 V = -40V, I = -80A DS DR
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