WMO80N03T1 - описание и поиск аналогов

 

WMO80N03T1. Аналоги и основные параметры

Наименование производителя: WMO80N03T1

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 59.5 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 80 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 16 ns

Cossⓘ - Выходная емкость: 277 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0055 Ohm

Тип корпуса: TO252

Аналог (замена) для WMO80N03T1

- подборⓘ MOSFET транзистора по параметрам

 

WMO80N03T1 даташит

 ..1. Size:610K  way-on
wmo80n03t1.pdfpdf_icon

WMO80N03T1

WMO80N03T1 30V N-Channel Enhancement Mode Power MOSFET Description WMO80N03T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. D S Features G TO-252 V = 30V, I = 80A DS D R

 7.1. Size:609K  way-on
wmo80n06ts.pdfpdf_icon

WMO80N03T1

WMO80N06TS 60V N-Channel Enhancement Mode Power MOSFET Description WMO80N06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. D S Features G V = 60V, I = 80A DS D TO-252 R

 7.2. Size:501K  way-on
wmo80n08ts.pdfpdf_icon

WMO80N03T1

WMO80N08TS 80V N-Channel Enhancement Mode Power MOSFET Description WMO80N08TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain D superior switching performance. S G Features TO-252 V = 80V, I = 80A DS D R

 9.1. Size:672K  way-on
wml80r480s wmo80r480s wmk80r480s wmn80r480s wmm80r480s wmj80r480s.pdfpdf_icon

WMO80N03T1

WML R480S, WM 0S L80R480S, WMO80R MK80R480 WMN , WMM80R MJ80R480 N80R480S, R480S, WM 0S 800V 0.4 S T Super Junction Power MOSFET Descrip ption WMOSTM S is Way new generation super yon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G and low gate charge performan WMOST

Другие MOSFET... WMO60N02T1 , WMO60N04T1 , WMO60P02TS , WMO60P03TS , WMO690N15HG2 , WMO6N80D1 , WML6N80D1 , WMO75N04T1 , AON6414A , WMO80N06TS , WMO80N08TS , WMO80P04TS , WMO90N02T1 , WMO90P03TS , WMO90P04TS , WMO95P06TS , WMO96N03T1 .

History: SUN05A25F

 

 

 

 

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