WMO80N06TS Todos los transistores

 

WMO80N06TS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: WMO80N06TS

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 92 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 80 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 9.6 nS

Cossⓘ - Capacitancia de salida: 235 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm

Encapsulados: TO252

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WMO80N06TS datasheet

 ..1. Size:609K  way-on
wmo80n06ts.pdf pdf_icon

WMO80N06TS

WMO80N06TS 60V N-Channel Enhancement Mode Power MOSFET Description WMO80N06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. D S Features G V = 60V, I = 80A DS D TO-252 R

 7.1. Size:610K  way-on
wmo80n03t1.pdf pdf_icon

WMO80N06TS

WMO80N03T1 30V N-Channel Enhancement Mode Power MOSFET Description WMO80N03T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. D S Features G TO-252 V = 30V, I = 80A DS D R

 7.2. Size:501K  way-on
wmo80n08ts.pdf pdf_icon

WMO80N06TS

WMO80N08TS 80V N-Channel Enhancement Mode Power MOSFET Description WMO80N08TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain D superior switching performance. S G Features TO-252 V = 80V, I = 80A DS D R

 9.1. Size:672K  way-on
wml80r480s wmo80r480s wmk80r480s wmn80r480s wmm80r480s wmj80r480s.pdf pdf_icon

WMO80N06TS

WML R480S, WM 0S L80R480S, WMO80R MK80R480 WMN , WMM80R MJ80R480 N80R480S, R480S, WM 0S 800V 0.4 S T Super Junction Power MOSFET Descrip ption WMOSTM S is Way new generation super yon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G and low gate charge performan WMOST

Otros transistores... WMO60N04T1 , WMO60P02TS , WMO60P03TS , WMO690N15HG2 , WMO6N80D1 , WML6N80D1 , WMO75N04T1 , WMO80N03T1 , IRFB4115 , WMO80N08TS , WMO80P04TS , WMO90N02T1 , WMO90P03TS , WMO90P04TS , WMO95P06TS , WMO96N03T1 , WMO9N65D1 .

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