WMO80N06TS MOSFET. Datasheet pdf. Equivalent
Type Designator: WMO80N06TS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 92 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 80 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 67 nC
trⓘ - Rise Time: 9.6 nS
Cossⓘ - Output Capacitance: 235 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: TO252
WMO80N06TS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMO80N06TS Datasheet (PDF)
wmo80n06ts.pdf
WMO80N06TS 60V N-Channel Enhancement Mode Power MOSFET DescriptionWMO80N06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DSFeatures G V = 60V, I = 80A DS DTO-252R
wmo80n03t1.pdf
WMO80N03T1 30V N-Channel Enhancement Mode Power MOSFET DescriptionWMO80N03T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DSFeatures GTO-252 V = 30V, I = 80A DS DR
wmo80n08ts.pdf
WMO80N08TS 80V N-Channel Enhancement Mode Power MOSFET DescriptionWMO80N08TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain Dsuperior switching performance. SGFeatures TO-252 V = 80V, I = 80A DS DR
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wmm80r720s wmn80r720s wmk80r720s wml80r720s wmp80r720s wmo80r720s.pdf
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wmo80p04ts.pdf
WMO80P04TS 40V P-Channel Enhancement Mode Power MOSFET DescriptionWMO80P04TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.DSFeatures GTO-252 V = -40V, I = -80A DS DR
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