FDS2670 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDS2670
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 112 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.13 Ohm
   Paquete / Cubierta: SO-8

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FDS2670 Datasheet (PDF)

..1. Size:107K fairchild semi
fds2670.pdf

August 2001FDS2670200V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 3.0 A, 200 V. RDS(ON) = 130 m @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DCconverters using either synchronous or conventional Low gate chargeswitching PWM controllers. Fast switching speedThese MOSFETs f

8.1. Size:543K 1
fds2672f085.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and oth

8.2. Size:406K fairchild semi
fds2672.pdf

August 2006FDS2672tmN-Channel UltraFET Trench MOSFET 200V, 3.9A, 70mFeatures General Description Max rDS(on) = 70m at VGS = 10V, ID = 3.9A This single N-Channel MOSFET is produced using Fairchild Semiconductors advanced UItraFET Trench Max rDS(on) = 80m at VGS = 6V, ID = 3.5A process that has been especially tailored to minimize the on-state resistance and ye

8.3. Size:557K fairchild semi
fds2672 f085.pdf

February 2010FDS2672_F085tmN-Channel UltraFET Trench MOSFET 200V, 3.9A, 70mFeatures General Description Max rDS(on) = 70m at VGS = 10V, ID = 3.9A This single N-Channel MOSFET is produced using Fairchild Semiconductors advanced UItraFET Trench Max rDS(on) = 80m at VGS = 6V, ID = 3.5A process that has been especially tailored to minimize the on-state resistance

8.4. Size:1605K kexin
fds2672.pdf

SMD Type MOSFETN-Channel MOSFETFDS2672 (KDS2672)SOP-8 Features VDS (V) = 200V ID = 3.9A (VGS = 10V) RDS(ON) 70m (VGS = 10V)1.50 0.15 RDS(ON) 80m (VGS = 6V)5 46 3 5 Drain1 Source6 Drain2 Source7 27 Drain3 Source8 Drain8 1 4 Gate Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 20

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