FDS2670 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

August 2001FDS2670200V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 3.0 A, 200 V. RDS(ON) = 130 m @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DCconverters using either synchronous or conventional Low gate chargeswitching PWM controllers. Fast switching speedThese MOSFETs f

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August 2006FDS2672tmN-Channel UltraFET Trench MOSFET 200V, 3.9A, 70mFeatures General Description Max rDS(on) = 70m at VGS = 10V, ID = 3.9A This single N-Channel MOSFET is produced using Fairchild Semiconductors advanced UItraFET Trench Max rDS(on) = 80m at VGS = 6V, ID = 3.5A process that has been especially tailored to minimize the on-state resistance and ye

February 2010FDS2672_F085tmN-Channel UltraFET Trench MOSFET 200V, 3.9A, 70mFeatures General Description Max rDS(on) = 70m at VGS = 10V, ID = 3.9A This single N-Channel MOSFET is produced using Fairchild Semiconductors advanced UItraFET Trench Max rDS(on) = 80m at VGS = 6V, ID = 3.5A process that has been especially tailored to minimize the on-state resistance

SMD Type MOSFETN-Channel MOSFETFDS2672 (KDS2672)SOP-8 Features VDS (V) = 200V ID = 3.9A (VGS = 10V) RDS(ON) 70m (VGS = 10V)1.50 0.15 RDS(ON) 80m (VGS = 6V)5 46 3 5 Drain1 Source6 Drain2 Source7 27 Drain3 Source8 Drain8 1 4 Gate Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 20