FDS2670 - описание и поиск аналогов

August 2001 FDS2670 200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 3.0 A, 200 V. RDS(ON) = 130 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional Low gate charge switching PWM controllers. Fast switching speed These MOSFETs f

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and oth

August 2006 FDS2672 tm N-Channel UltraFET Trench MOSFET 200V, 3.9A, 70m Features General Description Max rDS(on) = 70m at VGS = 10V, ID = 3.9A This single N-Channel MOSFET is produced using Fairchild Semiconductor s advanced UItraFET Trench Max rDS(on) = 80m at VGS = 6V, ID = 3.5A process that has been especially tailored to minimize the on-state resistance and ye

February 2010 FDS2672_F085 tm N-Channel UltraFET Trench MOSFET 200V, 3.9A, 70m Features General Description Max rDS(on) = 70m at VGS = 10V, ID = 3.9A This single N-Channel MOSFET is produced using Fairchild Semiconductor s advanced UItraFET Trench Max rDS(on) = 80m at VGS = 6V, ID = 3.5A process that has been especially tailored to minimize the on-state resistance

SMD Type MOSFET N-Channel MOSFET FDS2672 (KDS2672) SOP-8 Features VDS (V) = 200V ID = 3.9A (VGS = 10V) RDS(ON) 70m (VGS = 10V) 1.50 0.15 RDS(ON) 80m (VGS = 6V) 5 4 6 3 5 Drain 1 Source 6 Drain 2 Source 7 2 7 Drain 3 Source 8 Drain 8 1 4 Gate Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 20