WMP119N10LG2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WMP119N10LG2
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 65.8 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 55 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 7.9 nS
Cossⓘ - Capacitancia de salida: 210 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.013 Ohm
Paquete / Cubierta: TO251
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WMP119N10LG2 Datasheet (PDF)
wmp119n10lg2.pdf

WMP119N10LG2 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMP119N10LG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. Features V = 100V, I = 55A DS DR
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