WMP119N10LG2 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: WMP119N10LG2
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 65.8 W
Предельно допустимое напряжение сток-исток |Uds|: 100 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Максимально допустимый постоянный ток стока |Id|: 55 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 7.9 ns
Выходная емкость (Cd): 210 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.013 Ohm
Тип корпуса: TO251
Аналог (замена) для WMP119N10LG2
WMP119N10LG2 Datasheet (PDF)
wmp119n10lg2.pdf
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WMP119N10LG2 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMP119N10LG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. Features V = 100V, I = 55A DS DR
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Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
![WMP119N10LG2](https://alltransistors.com/images/us.png)
![WMP119N10LG2](https://alltransistors.com/images/es.png)
![WMP119N10LG2](https://alltransistors.com/images/ru.png)
Список транзисторов
Обновления
MOSFET: BSS123K2 | BRU26N50 | BRU24N50 | BRI7N65 | BRI7N60 | BRI740 | BRI65R380C | BRI5N65 | BRI50N06 | BRI4N70 | BRI2N70 | BRGN250N65YK | BRFL8N65 | BRFL7N65S | BRFL70R360C | BRFL65R380C