WMQ099N10LG2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

WMQ099N10LG2 Datasheet (PDF)

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WMQ099N10LG2 100V N-Channel Enhancement Mode Power MOSFET DescriptionDDDDWMQ099N10LG2 uses Wayon's 2nd generation power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state SGSSresistance and yet maintain superior switching performance. This SSGSdevice is well suited for high efficiency fast switching applicationsP

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WMQ090N04LG2 40V N-Channel Enhancement Mode Power MOSFET DescriptionD DD DDDD DWMQ090N04LG2 uses Wayon's 2nd generation power trench MOSFET SGStechnology that has been especially tailored to minimize the on-state SSSGSresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PD

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WMQ090NV6LG4 65V N-Channel Enhancement Mode Power MOSFET DescriptionDDDDDDWMQ090NV6LG4 uses Wayon's 4th generation power trench D DMOSFET technology that has been especially tailored to minimize the SGSSSSon-state resistance and yet maintain superior switching performance. GSThis device is well suited for high efficiency fast switching applications.

9.3. Size:985K way-on
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WMQ098N03LG2 30V N-Channel Enhancement Mode Power MOSFET DescriptionDDDDDDD DWMQ098N03LG2 uses Wayon's 2nd generation power trench MOSFET SGtechnology that has been especially tailored to minimize the on-state SSSSGSresistance and yet maintain superior switching performance. This PDFN3030-8Ldevice is well suited for high efficiency fast switching app

Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .