Справочник MOSFET. WMQ099N10LG2

 

WMQ099N10LG2 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: WMQ099N10LG2
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 41.6 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 47 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 3.9 ns
   Cossⓘ - Выходная емкость: 300 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.011 Ohm
   Тип корпуса: PDFN3030-8L
     - подбор MOSFET транзистора по параметрам

 

WMQ099N10LG2 Datasheet (PDF)

 ..1. Size:491K  way-on
 wmq099n10lg2.pdf pdf_icon

WMQ099N10LG2

WMQ099N10LG2 100V N-Channel Enhancement Mode Power MOSFET DescriptionDDDDWMQ099N10LG2 uses Wayon's 2nd generation power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state SGSSresistance and yet maintain superior switching performance. This SSGSdevice is well suited for high efficiency fast switching applicationsP

 9.1. Size:686K  way-on
 wmq090n04lg2.pdf pdf_icon

WMQ099N10LG2

WMQ090N04LG2 40V N-Channel Enhancement Mode Power MOSFET DescriptionD DD DDDD DWMQ090N04LG2 uses Wayon's 2nd generation power trench MOSFET SGStechnology that has been especially tailored to minimize the on-state SSSGSresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PD

 9.2. Size:624K  way-on
 wmq090nv6lg4.pdf pdf_icon

WMQ099N10LG2

WMQ090NV6LG4 65V N-Channel Enhancement Mode Power MOSFET DescriptionDDDDDDWMQ090NV6LG4 uses Wayon's 4th generation power trench D DMOSFET technology that has been especially tailored to minimize the SGSSSSon-state resistance and yet maintain superior switching performance. GSThis device is well suited for high efficiency fast switching applications.

 9.3. Size:985K  way-on
 wmq098n03lg2.pdf pdf_icon

WMQ099N10LG2

WMQ098N03LG2 30V N-Channel Enhancement Mode Power MOSFET DescriptionDDDDDDD DWMQ098N03LG2 uses Wayon's 2nd generation power trench MOSFET SGtechnology that has been especially tailored to minimize the on-state SSSSGSresistance and yet maintain superior switching performance. This PDFN3030-8Ldevice is well suited for high efficiency fast switching app

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History: STF2454A

 

 
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