WMQ25P04T1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WMQ25P04T1
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 31.2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 25 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 20.2 nS
Cossⓘ - Capacitancia de salida: 190 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.019 Ohm
Paquete / Cubierta: PDFN3030-8L
Búsqueda de reemplazo de WMQ25P04T1 MOSFET
WMQ25P04T1 Datasheet (PDF)
wmq25p04t1.pdf

WMQ25P04T1 40V P-Channel Enhancement Mode Power MOSFET DescriptionDDDDWMQ25P04T1 uses advanced power trench technology that has DDD Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. SGSSSSGSFeatures PDFN3030-8L V = -40V, I = -25A DS DR
wmq25p03t1.pdf

WMQ25P03T1 30V P-Channel Enhancement Mode Power MOSFET DescriptionDDDDWMQ25P03T1 uses advanced power trench technology that has DDD Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. SGSSSSGSFeatures PDFN3030-8L V = -30V, I = -25A DS DR
wmq25p06ts.pdf

WMQ25P06TS 60V P-Channel Enhancement Mode Power MOSFET DescriptionWMQ25P06TS uses advanced power trench technology that has been D DDDDDD Despecially tailored to minimize the on-state resistance and yet maintain superior switching performance. GsssssGsFeatures PDFN3030-8L V = -60V, I = -25A DS DR
Otros transistores... WMQ140NV6LG4 , WMQ15DN04TS , WMQ175N10HG4 , WMQ175N10LG4 , WMQ18P04TS , WMQ20DN06TS , WMQ20N06TS , WMQ25P03T1 , P60NF06 , WMQ25P06TS , WMQ26P02TS , WMQ28N03T1 , WMQ30DN04TS , WMQ30DP03TS , WMQ30N02T1 , WMQ30N03T2 , WMQ30N04TS .
History: AOD380A60C | AP9950GP | CJ3420
History: AOD380A60C | AP9950GP | CJ3420



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