WMQ25P04T1 MOSFET. Datasheet pdf. Equivalent

   Type Designator: WMQ25P04T1
   Marking Code: Q25P04
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 31.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id|ⓘ - Maximum Drain Current: 25 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 35 nC
   trⓘ - Rise Time: 20.2 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
   Package: PDFN3030-8L

WMQ25P04T1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

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