All MOSFET. WMQ25P04T1 Datasheet

 

WMQ25P04T1 Datasheet and Replacement


   Type Designator: WMQ25P04T1
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 31.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20.2 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
   Package: PDFN3030-8L
 

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WMQ25P04T1 Datasheet (PDF)

 ..1. Size:639K  way-on
 wmq25p04t1.pdf pdf_icon

WMQ25P04T1

WMQ25P04T1 40V P-Channel Enhancement Mode Power MOSFET DescriptionDDDDWMQ25P04T1 uses advanced power trench technology that has DDD Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. SGSSSSGSFeatures PDFN3030-8L V = -40V, I = -25A DS DR

 7.1. Size:601K  way-on
 wmq25p03t1.pdf pdf_icon

WMQ25P04T1

WMQ25P03T1 30V P-Channel Enhancement Mode Power MOSFET DescriptionDDDDWMQ25P03T1 uses advanced power trench technology that has DDD Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. SGSSSSGSFeatures PDFN3030-8L V = -30V, I = -25A DS DR

 7.2. Size:590K  way-on
 wmq25p06ts.pdf pdf_icon

WMQ25P04T1

WMQ25P06TS 60V P-Channel Enhancement Mode Power MOSFET DescriptionWMQ25P06TS uses advanced power trench technology that has been D DDDDDD Despecially tailored to minimize the on-state resistance and yet maintain superior switching performance. GsssssGsFeatures PDFN3030-8L V = -60V, I = -25A DS DR

Datasheet: WMQ140NV6LG4 , WMQ15DN04TS , WMQ175N10HG4 , WMQ175N10LG4 , WMQ18P04TS , WMQ20DN06TS , WMQ20N06TS , WMQ25P03T1 , AO4407 , WMQ25P06TS , WMQ26P02TS , WMQ28N03T1 , WMQ30DN04TS , WMQ30DP03TS , WMQ30N02T1 , WMQ30N03T2 , WMQ30N04TS .

History: BSC100N06LS3G

Keywords - WMQ25P04T1 MOSFET datasheet

 WMQ25P04T1 cross reference
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 WMQ25P04T1 replacement

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