WMQ25P06TS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WMQ25P06TS
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 30 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 25 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 25 nS
Cossⓘ - Capacitancia de salida: 168 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.029 Ohm
Encapsulados: PDFN3030-8L
Búsqueda de reemplazo de WMQ25P06TS MOSFET
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WMQ25P06TS datasheet
wmq25p06ts.pdf
WMQ25P06TS 60V P-Channel Enhancement Mode Power MOSFET Description WMQ25P06TS uses advanced power trench technology that has been D D D D D D D D especially tailored to minimize the on-state resistance and yet maintain superior switching performance. G ss s ss G s Features PDFN3030-8L V = -60V, I = -25A DS D R
wmq25p04t1.pdf
WMQ25P04T1 40V P-Channel Enhancement Mode Power MOSFET Description D D D D WMQ25P04T1 uses advanced power trench technology that has D D D D been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S G S S S S G S Features PDFN3030-8L V = -40V, I = -25A DS D R
wmq25p03t1.pdf
WMQ25P03T1 30V P-Channel Enhancement Mode Power MOSFET Description D D D D WMQ25P03T1 uses advanced power trench technology that has D D D D been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S G S S S S G S Features PDFN3030-8L V = -30V, I = -25A DS D R
Otros transistores... WMQ15DN04TS , WMQ175N10HG4 , WMQ175N10LG4 , WMQ18P04TS , WMQ20DN06TS , WMQ20N06TS , WMQ25P03T1 , WMQ25P04T1 , BS170 , WMQ26P02TS , WMQ28N03T1 , WMQ30DN04TS , WMQ30DP03TS , WMQ30N02T1 , WMQ30N03T2 , WMQ30N04TS , WMQ30N06TS .
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