WMQ25P06TS Specs and Replacement
Type Designator: WMQ25P06TS
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 25 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 168 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm
Package: PDFN3030-8L
WMQ25P06TS substitution
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WMQ25P06TS datasheet
wmq25p06ts.pdf
WMQ25P06TS 60V P-Channel Enhancement Mode Power MOSFET Description WMQ25P06TS uses advanced power trench technology that has been D D D D D D D D especially tailored to minimize the on-state resistance and yet maintain superior switching performance. G ss s ss G s Features PDFN3030-8L V = -60V, I = -25A DS D R ... See More ⇒
wmq25p04t1.pdf
WMQ25P04T1 40V P-Channel Enhancement Mode Power MOSFET Description D D D D WMQ25P04T1 uses advanced power trench technology that has D D D D been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S G S S S S G S Features PDFN3030-8L V = -40V, I = -25A DS D R ... See More ⇒
wmq25p03t1.pdf
WMQ25P03T1 30V P-Channel Enhancement Mode Power MOSFET Description D D D D WMQ25P03T1 uses advanced power trench technology that has D D D D been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S G S S S S G S Features PDFN3030-8L V = -30V, I = -25A DS D R ... See More ⇒
Detailed specifications: WMQ15DN04TS, WMQ175N10HG4, WMQ175N10LG4, WMQ18P04TS, WMQ20DN06TS, WMQ20N06TS, WMQ25P03T1, WMQ25P04T1, BS170, WMQ26P02TS, WMQ28N03T1, WMQ30DN04TS, WMQ30DP03TS, WMQ30N02T1, WMQ30N03T2, WMQ30N04TS, WMQ30N06TS
Keywords - WMQ25P06TS MOSFET specs
WMQ25P06TS cross reference
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