All MOSFET. WMQ25P06TS Datasheet

 

WMQ25P06TS MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMQ25P06TS
   Marking Code: Q25P06S
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 25 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 75 nC
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 168 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm
   Package: PDFN3030-8L

 WMQ25P06TS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMQ25P06TS Datasheet (PDF)

 ..1. Size:590K  way-on
wmq25p06ts.pdf

WMQ25P06TS
WMQ25P06TS

WMQ25P06TS 60V P-Channel Enhancement Mode Power MOSFET DescriptionWMQ25P06TS uses advanced power trench technology that has been D DDDDDD Despecially tailored to minimize the on-state resistance and yet maintain superior switching performance. GsssssGsFeatures PDFN3030-8L V = -60V, I = -25A DS DR

 7.1. Size:639K  way-on
wmq25p04t1.pdf

WMQ25P06TS
WMQ25P06TS

WMQ25P04T1 40V P-Channel Enhancement Mode Power MOSFET DescriptionDDDDWMQ25P04T1 uses advanced power trench technology that has DDD Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. SGSSSSGSFeatures PDFN3030-8L V = -40V, I = -25A DS DR

 7.2. Size:601K  way-on
wmq25p03t1.pdf

WMQ25P06TS
WMQ25P06TS

WMQ25P03T1 30V P-Channel Enhancement Mode Power MOSFET DescriptionDDDDWMQ25P03T1 uses advanced power trench technology that has DDD Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. SGSSSSGSFeatures PDFN3030-8L V = -30V, I = -25A DS DR

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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